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Adjuvant for chemical mechanical polishing slurry

A kind of auxiliary agent, slurry technology, used in other chemical processes, chemical instruments and methods, polishing compositions containing abrasives, etc.

Active Publication Date: 2007-11-07
LG CHEM LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0014] Although the CMP slurry composition has been intensively researched and developed so far to improve the polishing rate of the insulating silicon dioxide layer and the polishing rate of the SiN layer The selectivity indicated by the ratio of , but the slurry composition still has a lot of room for improvement

Method used

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  • Adjuvant for chemical mechanical polishing slurry
  • Adjuvant for chemical mechanical polishing slurry

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0072] Embodiment 1. is used for the preparation of auxiliary agent of CMP slurry

[0073] (preparation of macromonomer)

[0074] Into a 500 mL four-necked flask equipped with a stirrer, a thermometer, a nitrogen inlet, and a condenser, 75 parts by weight of isopropanol was added, and the mixture was bubbled with nitrogen at reflux temperature for about 20 minutes. Then, 0.032 g of bis(borondifluorodiphenylglyoxime) cobalt (II) (bis(borondifluorodiphenyl glycyoxime) CoII)) was dissolved in 80 g of methyl ethyl ketone, and it was added dropwise over about 270 minutes into the above reactor. At the same time, monomers containing 10 parts by weight of methacrylic acid and 90 parts by weight of hydroxyethyl methacrylate and monomers dissolved in 49 g of isopropanol, containing 1 g of 2,2- Polymerization initiator solution of azobis-2-methyl-butyronitrile. After the polymerization initiator solution was added, the reaction mixture was maintained at reflux temperature for about 3...

Embodiment 2

[0082] Embodiment 2 is used for the preparation of the auxiliary agent of CMP slurry

[0083] (preparation of macromonomer)

[0084] The macromonomer was prepared in the same manner as described in Example 1.

[0085] (Preparation of grafted polyelectrolyte)

[0086] Into a 500 mL four-neck flask equipped with a stirrer, thermometer, nitrogen inlet and condenser were added 120 parts by weight of isopropanol, 30 parts by weight of the above-mentioned macromonomer, 2.9 parts by weight of methyl methacrylate and 7.1 parts by weight of of acrylic acid, the mixture was foamed at reflux temperature for about 10 minutes.

[0087] 0.2 parts by weight of tert-amyl peroxypivalate as an initiator was added to the mixture, and a monomer comprising 17.2 parts by weight of methyl methacrylate and 42.8 parts by weight of acrylic acid and 1.0 parts by weight of of tert-amyl peroxypivalate. Then, 0.3 parts by weight of tert-amyl peroxypivalate was added dropwise thereto with 10 minutes, an...

Embodiment 3

[0092] Embodiment 3 is used for the preparation of the auxiliary agent of CMP slurry

[0093] (preparation of macromonomer)

[0094] Except using 100 parts by weight of hydroxyethyl methacrylate to replace the monomer comprising 10 parts by weight of methacrylic acid mixed with 90 parts by weight of hydroxyethyl methacrylate, the same method as described in Example 1 was used to obtain a large single body solution. The molecular weight of the macromonomer obtained in this example was 1,000, the degree of polymerization was 8, and the purity was about 96%.

[0095] (Preparation of grafted polyelectrolyte)

[0096] Into a 500 mL four-necked flask equipped with a stirrer, thermometer, nitrogen inlet and condenser, add 120 parts by weight of isopropanol, 30 parts by weight of the above-mentioned macromonomer, 4.3 parts by weight of methyl methacrylate and 5.3 parts by weight of acrylic acid, the mixture was foamed at reflux temperature for about 10 minutes.

[0097] Add 0.2 pa...

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Abstract

Disclosed is an adjuvant for use in simultaneous polishing of a cationically charged material and an anionically charged material, which forms a adsorption layer on the cationically charged material in order to increase the polishing selectivity of the anionically charged material to cationically charged material, wherein the adjuvant comprises a polyelectrolyte salt containing: (a) a graft type polyelectrolyte that has a weight average molecular weight of 1,000-20,000 and comprises a backbone and a side chain; and (b) a basic material. CMP (chemical mechanical polishing) slurry comprising the above adjuvant and abrasive particles is also disclosed.

Description

technical field [0001] The present invention relates to an auxiliary agent for CMP (Chemical Mechanical Polishing) slurry, or an auxiliary agent for simultaneous polishing of cationically charged materials and anionically charged materials, which forms an adsorption layer on the cationically charged material to enhance the anionically charged material's resistance to Polishing selectivity of cationically charged materials. Background technique [0002] As microelectronic devices continue to be provided with higher levels of integration, planarization processes for fabricating such microelectronic devices become increasingly important. As part of the effort to achieve highly integrated microelectronic devices, multiple interconnection techniques and multilayer stacking techniques are commonly used on semiconductor wafers. However, the non-planarization that occurs after implementing one of the techniques described above causes many problems. Accordingly, planarization proce...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K3/14B24B37/00H01L21/304
CPCC09G1/02C09K3/1463H01L21/304H01L21/30625H01L21/3212
Inventor 李基罗金种珌李政熹洪政填洪瑛晙金鲁马李安娜
Owner LG CHEM LTD
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