Circuit structure of organic thin film transistor with dual-gate and its use

Abstract

The invention provides a circuit structure with double-gate organic TFT (thin film transistor) and its application. And the invention covers a protection layer on an organic TFT structure with a bottom gate to act as the other gate insulating layer and then locally forms a metal layer on the protection layer to act as the other gate and then completes a double-gate structure and applies it to electronic circuit design. Thus, it can regulate starting voltage of organic TFT corresponding to gate and benefit to change characteristic of the organic TFT to improve signal transmission accuracy.

Description

technical field

[0001] The invention relates to a circuit structure with an organic thin film transistor; in particular, it relates to a circuit structure with a double-gate organic thin film transistor. Background technique

[0002] Due to the non-doping process of the current organic thin film transistors, the threshold voltage of the transistor components cannot be controlled, and often depends on the surface conditions of the components, the purity of the organic semiconductor, and the material properties of the gate and the gate insulating layer. The starting voltage value V th Often too large, reaching more than 10 volts, in the application of electronic circuits, it not only consumes power but also causes a certain voltage drop loss, resulting in distortion of signal transmission. 1A and FIG. 1B are schematic diagrams of two kinds of inverter circuits using organic thin film transistors, wherein the existing inverter in FIG. 1A includes a first enhanced type N-channe...

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