Surface activator composition

A technology of surfactants and compositions, applied in the field of active agents, can solve problems such as equipment corrosion, achieve the effects of reducing surface tension, good cleaning effect, and improving polishing rate

Inactive Publication Date: 2007-12-05
天津晶岭电子材料科技有限公司
View PDF0 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In addition, some domestic active agents are acidic and will cause corrosion to equipment, such as 3F active agents

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0014] Embodiment 1: a kind of surfactant composition, it is made of fatty alcohol polyoxyethylene (20) ether (Pingping plus 0-20) in the polyoxyethylene ether surfactant——RO(CH 2 CH 2 O) 2 OH where R=C 12-18 h 25-37 , Condensate of ethylene oxide and higher fatty alcohol in polyoxyethylene ether surfactants (JFC)——R-O(C 2 h 4 O) nH and pure water composition, its weight ratio is respectively 15%, 5%, 80%.

Embodiment 2

[0016] A kind of tensio-active agent composition, it is condensate (JFC) by the condensate (JFC )——R-O(C 2 h 4 O) n Composed of H and pure water, its weight ratio is 14%, 6%, 80% respectively,

Embodiment 3

[0018] A kind of surfactant composition, it is by the Oπ-7 of Oπ series in the polyol type surfactant, the condensate (JFC) of ethylene oxide in the polyoxyethylene ether surfactant and higher fatty alcohol— —R-O(C 2 h 4 O) n Composed of H and pure water, its weight ratio is 12%, 3%, 85% respectively,

[0019] The above components are all commercial products.

[0020] Technical effect data of the present invention is:

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
particle diameteraaaaaaaaaa
particle diameteraaaaaaaaaa
Login to view more

Abstract

The surfactant composition consists of surfactant in 5-20 % and pure water in 80-95 %, and the surfactant is polyol surfactant and / or polyethylene ether surfactant possessing high water solubility, high permeability and no pollution. The surfactant composition is used in cleaning semiconductor material, and can lower the surface tension, increase permeability and result in excellent cleaning effect on semiconductor material.

Description

(1) Technical field: [0001] The present invention relates to active agents, in particular to a surfactant composition, which is mainly used for cleaning and storing the surface of semiconductor materials (such as silicon wafers, germanium wafers, gallium arsenide and other materials). (two) background technology: [0002] It is difficult for current surfactants to remove particles, organic matter and residual abrasive particles on the surface of semiconductor materials (such as silicon wafers, germanium wafers, gallium arsenide, etc.) and the surface and grooves of VLSI with the help of corresponding cleaning equipment It is difficult to achieve the purpose of long-term preservation after pollutants such as pollutants and cleaning. If there are still particles after cleaning, the material under the particles cannot be doped, resulting in low breakdown and pipeline breakdown. It will have a fatal impact on the integrated circuit chip, and even cause the device to fail. Ther...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C11D1/825
Inventor 仲跻和
Owner 天津晶岭电子材料科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products