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Substrate of vertical column array of nitride in second group

A technology of vertical pillars and nitrides, which is applied in the field of III-V semiconductor substrates and can solve problems such as regional dislocations

Inactive Publication Date: 2007-12-26
IND TECH RES INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the GaN epitaxial layer grown in this way still has severe regional dislocation phenomena, that is, the GaN epitaxial layer at the position without the barrier pattern 104 has relatively densely distributed dislocations.

Method used

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  • Substrate of vertical column array of nitride in second group
  • Substrate of vertical column array of nitride in second group
  • Substrate of vertical column array of nitride in second group

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Embodiment Construction

[0041] FIG. 3A is a schematic cross-sectional view of a Group-III nitride vertical pillar array substrate according to an embodiment of the present invention.

[0042] Referring to FIG. 3A , the III-nitride vertical pillar array substrate of the present invention includes a substrate 300 , a buffer layer 302 , a vertical pillar array layer 306 and a semiconductor layer 308 . The material of the substrate 300 is, for example, silicon, silicon carbide or aluminum oxide. The buffer layer 302 is located on the substrate 300 , and the material of the buffer layer 302 includes nitride, such as silicon nitride or group III silicon nitride, such as indium silicon nitride. The thickness of the buffer layer 302 is less than about 10 nanometers.

[0043] In addition, the buffer layer 302 may also have a composite layer structure, that is, the buffer layer 302 may also be a composite layer structure composed of a primary buffer layer 302a and a secondary buffer layer 304 on the primary b...

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Abstract

The substrate of vertical pole array includes substrate, buffer layer, and layer of vertical pole array. The buffer layer is on the substrate. The vertical pole array is on the buffer layer. The vertical pole array is composed of multiple vertical poles stand on the buffer layer.

Description

technical field [0001] The invention relates to a III-V semiconductor substrate, in particular to a III-nitride vertical rod array (vertical-rod array) substrate. Background technique [0002] In recent years, light-emitting diodes (LEDs) and lasers (LDs) have been widely used in the market. For example, the combination of blue light made of gallium nitride (GaN) and yellow phosphor can obtain white light, not only in terms of brightness or power consumption In all aspects, it is brighter than the previous traditional bulb light source and saves power, which can greatly reduce power consumption. In addition, the lifespan of light-emitting diodes is about tens of thousands of hours, which is longer than that of traditional light bulbs. [0003] From red light, green light, blue light to ultraviolet light, most of the main devices currently on the market are based on gallium nitride series compounds, but due to the aluminum oxide substrate (sapphire) itself and gallium nitrid...

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Application Information

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IPC IPC(8): H01L33/00H01S5/00H01L33/02
Inventor 赖志铭刘文岳蔡政达许荣宗果尚志沈昌宏林弘伟
Owner IND TECH RES INST