Temperature setting method for heat treating plate, temperature setting device for heat treating plate, program and computer-readable recording medium recording program

A temperature setting and temperature correction technology, which is applied in the field of temperature setting, device, program and computer-readable recording medium for recording the heat treatment plate, can solve the problems such as temperature deviation of the wafer surface, and improve the finished product. rate effect

Active Publication Date: 2008-02-06
TOKYO ELECTRON LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] However, if the temperature adjustment of each region of the above-mentioned hot plate is performed at the same set temperature as a whole, the temperature inside the wafer surface on the hot plate will vary due to differences in thermal resistance of each region, for example.

Method used

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  • Temperature setting method for heat treating plate, temperature setting device for heat treating plate, program and computer-readable recording medium recording program
  • Temperature setting method for heat treating plate, temperature setting device for heat treating plate, program and computer-readable recording medium recording program
  • Temperature setting method for heat treating plate, temperature setting device for heat treating plate, program and computer-readable recording medium recording program

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Embodiment Construction

[0029] Hereinafter, the most preferred embodiment of the present invention will be described. Fig. 1 is a plan view schematically showing the structure of a coating and developing processing system 1 provided in a temperature setting device for a heat treatment plate according to this embodiment, Fig. 2 is a front view of the coating and developing processing system 1, and Fig. 3 is a coating and developing processing Rear view of System 1.

[0030] The coating and development processing system 1 has, as shown in FIG. The cartridge station 2 of the lithography process, and a plurality of various processing devices that implement predetermined processing in a single-wafer manner in the photolithography process are arranged in multiple layers. The processing station 3 is adjacent to the processing station 3 and an exposure device (not shown ), the structure in which the interface portion 4 receiving the wafer W is integrally connected.

[0031] The cassette station 2 is provid...

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Abstract

Temperature setting of a thermal plate is performed so that the line width of a resist pattern is uniformly formed within a wafer. The thermal plate of a PEB unit is divided into a plurality of thermal plate regions so that the temperature can be set for each of the thermal plate regions. A temperature correction value for adjusting the temperature within the wafer mounted on the thermal plate is set for each of the thermal plate regions of the thermal plate. The temperature correction value for each of the thermal plate regions of the thermal plate is set after calculation by a calculation model created from a correlation between a line width of the resist pattern formed by thermal processing on the thermal plate and the temperature correction value. The calculation model M calculates the temperature correction value to make the line width uniform within the wafer, based on a line width measured value of the resist pattern.

Description

technical field [0001] The present invention relates to a temperature setting method for a heat treatment plate, a temperature setting device for a heat treatment plate, a program, and a computer-readable recording medium for recording the program. Background technique [0002] For example, in the photolithography process of manufacturing semiconductor devices, for example, a photoresist solution is coated on a wafer, a photoresist coating process is formed to form a photoresist film, and a photoresist film is exposed to a predetermined pattern Exposure process After exposure, the heat treatment (post-exposure baking: post-exposure baking) to promote the chemical reaction in the photoresist film, the development treatment of developing the photoresist film after exposure, etc. are sequentially carried out on the wafer. A prescribed photoresist pattern is formed. [0003] For example, heat treatment such as the above-mentioned post-exposure bake is performed in a general hea...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/027G03F7/38H05B3/00H05B3/74
CPCH01L21/67748G03F7/38H01L21/67178H01L21/67248H01L21/67184H01L21/67103H01L21/67109H01L22/12H01L21/0274
Inventor 城坂惠富田浩田所真任
Owner TOKYO ELECTRON LTD
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