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Once programming memory and its operation method using resistor memory media

A memory and medium technology, applied in the field of one-time programming memory and its storage operation, can solve the problems of the floating gate of FLASH cannot be thinned, soft breakdown, etc.

Inactive Publication Date: 2008-02-13
FUDAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For example, the industry generally believes that flash memory will encounter a physical limit bottleneck, and the floating gate of FLASH cannot be thinned without limit with the development of technology generations; and the programmable read-only memory based on the breakdown effect of the oxide layer will encounter the problem of soft breakdown

Method used

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  • Once programming memory and its operation method using resistor memory media
  • Once programming memory and its operation method using resistor memory media
  • Once programming memory and its operation method using resistor memory media

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Embodiment Construction

[0038] The present invention will be described in more detail below with reference to the illustrations and examples. The present invention provides preferred embodiments, but should not be construed as being limited to the embodiments set forth herein.

[0039] Where the referenced figures are schematic illustrations of idealized embodiments of the invention, the illustrated embodiments of the invention should not be construed as limited to the specific shapes of the regions shown in the figures.

[0040] The accompanying drawings (1-2) are explained in the technical background of the invention.

[0041] 3( a ) and ( b ) respectively show a circuit structure diagram and a schematic cross-sectional view of a physical structure of a conventional 1T1R memory cell. Each storage unit 210 has a storage resistor 201 and a gating device 200. The storage resistor 201 is directly connected to one end 202 of the gating device 200. In Figure b, TE and BE represent the upper electrode and...

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Abstract

The invention belongs to the technical field of integrated circuit, and essentially relates to a one-time programming memory and a storing method. A metal oxide with two or more elements and the capability of repeated programming is used in the memory as storing media. Different voltages with different polarities are applied on both ends of the storing media for programming and erasing operations. The storing media of the invention has the capability of repeated programming, so the memory of the invention can be intelligently erased and tested for repeated programming. The yield rate and reliability of the memory of the invention are both increased, and the memory has low power consumption, high yield rate and high capacity matrix blocks.

Description

technical field [0001] The invention belongs to the technical field of integrated circuits, and in particular relates to a one-time programming memory and its storage operation method. Background technique [0002] The non-volatile memory can still maintain the stored data when the power is off, which makes the non-volatile memory have extremely wide applications in various types of electronic devices. One-time-programmable memory (OTP) is one of the common non-volatile memories. It stores logic information through memory cells crossed by word lines and bit lines. Among them, common memory cells include fuses, antifuse and charge trapping Devices (such as floating gate avalanche injection field effect transistors). Program-once memory is generally not reprogrammable. [0003] A one-time-programmable (OTP) cell uses the breakdown effect of a silicon dioxide layer in a capacitor to store data. This basic storage programmable read-only memory connects an oxide capacitor and ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C17/08
Inventor 林殷茵金钢陈邦明
Owner FUDAN UNIV
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