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Wafer processing method

A laser processing method, wafer technology, applied in metal processing, stone processing equipment, metal processing equipment, etc., can solve problems such as damage, cutting blade damage device area, etc.

Active Publication Date: 2008-02-27
DISCO CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, there is a problem that not only the cutting blade is broken but also the device region of the thinner wafer is damaged.

Method used

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  • Wafer processing method
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Embodiment Construction

[0031] Hereinafter, preferred embodiments of the laser processing method of a wafer using the present invention will be described in detail with reference to the drawings.

[0032] FIG. 1 shows a perspective view of a semiconductor wafer as a wafer processed by the laser processing method of the wafer according to the present invention. The semiconductor wafer 100 shown in FIG. 1 is made of, for example, a silicon wafer with a thickness of 350 μm. A plurality of dicing lines 101 are formed in a grid pattern on the surface 100 a, and a plurality of regions divided by the plurality of dicing lines 101 are formed with Devices 102 such as ICs and LSIs. The semiconductor wafer 100 configured in this way has a device region 104 in which the device 102 is formed and a peripheral remaining region 105 surrounding the device region 104 .

[0033] When the above-mentioned semiconductor wafer 100 is cut along the dicing line 101 and divided into individual semiconductor chips, the area c...

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Abstract

A laser processing method for wafer characteristic is in that a separating groove forms at the boundary part of the wafer instrument area and peripheral remain area, the wafer has the instrument area forming a plurality of instruments on the surface and the peripheral area surrounding the instrument area. The laser processing method comprises: a wafer placement working procedure placing on the chuck platform holding surface; a center deviation detection working procedure obtaining the wafer center coordinate, and detecting the deviation between the coordinate of the chuck platform center; a center position alignment working procedure, correspondingly moving the chuck platform and the wafer to make the wafer center align to the position of chuck platform center; and laser processing working procedure, to the boundary part of the wafer instrument area and peripheral remain area placed on the chuck platform and applied center position alignment working procedure, from the laser ray irradiation mechanism irradiating the laser ray and rotating the chuck platform at the same time, the separating groove formed at the boundary part of the wafer instrument area and peripheral remain area.

Description

technical field [0001] The present invention relates to a method of processing a wafer having a device region on which a plurality of devices are formed on the surface and a peripheral remaining region surrounding the device region, forming a processing groove in a boundary portion of a device region and a peripheral remaining region of a wafer. Background technique [0002] In the manufacturing process of semiconductor devices, a plurality of areas are divided by pre-segmentation lines called "streets" arranged in a grid on the surface of a roughly disc-shaped semiconductor wafer. IC, LSI and other devices. Then, the regions where the devices are formed are divided by cutting the semiconductor wafer along dicing lines to manufacture individual semiconductor chips. Also, optical device wafers in which gallium nitride-based compound semiconductors and the like are stacked on the surface of a sapphire substrate are also divided into individual optical devices such as light-em...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/00H01L21/302H01L21/268H01L21/68B23K26/36B23K26/42B28D5/00H01L21/304
CPCB23K26/4075B23K2201/40B23K26/0853B23K26/03B23K26/367B23K26/0884B23K26/032B23K26/364B23K26/40B23K2101/40B23K2103/50
Inventor 重松孝一武田升
Owner DISCO CORP
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