Monocrystalline silicon high-efficient composite cutting method and cutting system thereof

A cutting method, single crystal silicon technology, applied in the direction of fine working devices, stone processing equipment, manufacturing tools, etc., can solve the problems of wire life limitation, poor cutting quality, low cutting efficiency, etc., to reduce processing costs, cut Good effect, the effect of improving production efficiency

Inactive Publication Date: 2008-03-12
NANJING UNIV OF AERONAUTICS & ASTRONAUTICS
View PDF0 Cites 36 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Combination of diamond abrasive and saw wire matrix The strength is not high, and the life of the saw wire is also limited limit
[0004] To sum up, the existing methods either have low cutting efficiency or poor cutting quality. At present, there is no cutting method and its cutting system that can not only guarantee the cutting quality but also meet the requirements of production efficiency.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Monocrystalline silicon high-efficient composite cutting method and cutting system thereof
  • Monocrystalline silicon high-efficient composite cutting method and cutting system thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] A method for high-efficiency composite cutting of single crystal silicon, which will be to clamp the single crystal silicon rod to be cut on the feed table of the improved (see Embodiment 2 for specific improvements) wire electric discharge machine tool, and use solid The metal wire bonded with diamond abrasive is used as the cutting wire for wire electric discharge cutting, and the advantages of fast wire electric discharge cutting processing speed and good cutting effect of diamond abrasive on the bonded abrasive metal wire are fully utilized to achieve fast and efficient processing of single crystal silicon rods. The purpose of cutting is to make the surface of the cut single crystal silicon naturally form a textured structure with anti-reflection effect. The metal wire bonded with diamond abrasives of the present invention can be a commercially available product, and the wire electric discharge machine tool can also be a commercially available common electric dischar...

Embodiment 2

[0023] As shown in Figures 1, 2, and 3.

[0024] A high-efficiency composite cutting system for monocrystalline silicon, including a wire electric discharge machine tool and a metal cutting wire 6 consolidated with diamond abrasives, and a single crystal silicon rod 7 is installed on the feed workbench of the wire electric discharge machine tool, said Working wheels 4, 5, tensioning wheels 3 and two bobbins 1, 2 are also installed on the workbench, and the two working wheels 4, 5 are respectively installed on both sides of the monocrystalline silicon rod 7, and the tensioning wheel 3 Installed between the bobbin 1 and the working wheel 4 and / or between the bobbin 2 and the working wheel 5, one end of the metal cutting wire 6 consolidated with diamond abrasive is fixed on the bobbin 1, and the other end is bypassed The working wheels 4, 5 and the tensioning wheel 3 are fixed on the bobbin 2, as shown in Figure 1. The fixed points of the metal cutting wire 6 on the bobbins 1 an...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

An efficiently composite cutting method of monocrystalline silicon is characterized in that a monocrystalline silicon rod for cutting is installed and nipped at an electric spark linear cutting machine; metallic thread which is concreted with diamond grinding material is used as cutting wire to make the electric spark linear cutting; the advantages that the processing speed of the electric spark linear cutting is high and the cutting effect of the diamond grinding material at the metallic thread of the concreted grinding material is good are completely exerted; the purpose to realize the quickly and efficiently cutting towards the monocrystalline silicon rod is achieved; at the same time the surface of the cut monocrystalline silicon naturally forms a fleece-faced texture which has the effect of anti-reflection. The present invention has a series of advantages of simple method, high efficiency of processing, good quality etc.

Description

technical field [0001] The invention relates to a method for cutting and processing monocrystalline silicon materials, in particular to a method and a cutting system in which wire electric discharge cutting technology is combined with a fixed diamond metal wire phase structure and a cutting system thereof, specifically a monocrystalline silicon material. A high-efficiency composite cutting method and a cutting system thereof. Background technique [0002] As we all know, at present, the commonly used monocrystalline silicon cutting methods with better cutting efficiency and slicing quality include diamond inner diameter slicing method, free abrasive (multiple) wire saw slicing method, and fixed abrasive (multiple) wire saw method. The main advantages and disadvantages are shown in the table below: [0003] cutting method advantage shortcoming Diamond inner diameter slice method The blade has good stability and mature technology....

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): B28D5/04
Inventor 左敦稳赵礼刚孙玉利卢文壮朱永伟
Owner NANJING UNIV OF AERONAUTICS & ASTRONAUTICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap