Method for increasing permalloy thin film magnetic resistance change rate

A technology of permalloy and magnetoresistance, which is applied in the field of preparation of functional material thin films, can solve the problems of adverse effects on the magnetic properties of permalloy thin films, increase the difficulty of thin film preparation, increase the thickness of magnetic dead layers, etc., so as to improve anisotropic magnetic properties. Effect of resistance change rate, device performance improvement, and magnetoresistance change rate improvement

Inactive Publication Date: 2008-03-26
UNIV OF SCI & TECH BEIJING
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Problems solved by technology

However, while these methods increase the rate of change of anisotropic magnetoresistance, they also bring new problems
Although annealing can improve the anisotropic magnetoresistance of permalloy thin films, annealing also promotes the diffusion between Ta and NiFe layers, increases the thickness of the magneto-dead layer, and is detrimental to the magnetic properties of permalloy thin films. It is unfavorable to use in high temperature environment; while replacing the Ta seed layer with NiFeCr, although the diffusion between Ta and NiFe layers is avoided, the NiFeCr seed layer is formed by co-sputtering of NiFe and Cr targets, and the composition is difficult to control, increasing Difficulty in preparing thin films

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  • Method for increasing permalloy thin film magnetic resistance change rate

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[0007] As shown in Figure 1, the sputtering process condition of the curve (a) is: the background vacuum degree of the sputtering chamber is 1×10 -5 Pa, the gas pressure of argon (99.99% pure) during sputtering is 0.2Pa. During the sputtering process, a magnetic field parallel to the film surface is applied on the surface of the substrate, the magnitude is 150Oe, and the substrate rotates at a rate of 20r / min; 100 Ȧ) / NOL (10 Ȧ) / Ta (20 Ȧ); when the cobalt-iron CoFe nano oxide layer was prepared, the oxygen pressure was 0.1Pa, and the oxidation time was 10 minutes; the background vacuum was 1×10 during annealing -4 Pa, the magnetic field applied parallel to the easy axis of the film is 150Oe, and the annealing time is 60 minutes.

[0008] The sputtering process condition of curve (b) is: the background vacuum of the sputtering chamber is 3×10 -5 Pa, the gas pressure of argon (99.99% pure) during sputtering is 0.3Pa. During the sputtering process, a magnetic field parallel to ...

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Abstract

The present invention is method of raising the magento resistance change rate of permalloy film by means of nanometer oxide layer and vacuum annealing. Multilayer Ta/nanometer CoFe oxide layer/NiFe/nanometer CoFe oxide layer/Ta film is formed through depositing on cleaned glass or silicon substrate by means of using one magnetically controlled sputtering instrument. The multilayer Ta/nanometer CoFe oxide layer/NiFe/nanometer CoFe oxide layer/Ta film has nanometer CoFe oxide layers inserted into each of the Ta/NiFe interfaces to check the diffusion between Ta and NiFe, and this can raise the change rate of the permalloy film in anisotropic magento resistance. In addition, the film preparing process has easy control.

Description

Technical field: [0001] The invention relates to a preparation method of a functional material thin film, in particular to the modification of an anisotropic magnetoresistance thin film. technical background: [0002] Anisotropic magnetoresistive permalloy thin films are usually used to manufacture application devices such as computer disk read heads and magnetic field sensors, and are widely used in processing industries, numerical control machine tools, automobile control, traffic management, home appliances, civil electricity meters, military navigation and other fields. Anisotropic magnetoresistance permalloy thin films usually choose Ta as Ni 81 Fe 19 The seed layer of the film has great advantages in volume, quality and cost due to its simple structure, relatively easy manufacture, low price and good stability. Therefore, the international community is still constantly exploring the potential of AMR thin films, improving their magnetic field sensitivity, reducing noi...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/54C23C14/06C23C14/58
Inventor 滕蛟王乐张金中王东伟于广华
Owner UNIV OF SCI & TECH BEIJING
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