A non volatile memory structure and its making method

Abstract

The invention provides a non-volatile memory structure and a manufacture method thereof. The device includes an underlay with a surface area, which is provided thereon with a plurality of grid dielectric medium layers, wherein, at least two grid dielectric medium layers are provided thereon with a control grid and a floating grid respectively. The control grid and the floating grid are covered by a silicon dioxide barrier layer and a silicon nitride shield layer in turn. The barrier layer and the shield layer co-form a self alignment barrier layer (SAB). The invention has the advantages of good data retentivity, logic process compatibility, simpler process control and efficiency improvement.

Description

technical field [0001] The present invention relates to a semiconductor device structure and a manufacturing method thereof, in particular to a programmable non-volatile device structure and a manufacturing method thereof. Background technique [0002] Logic circuits can achieve good data processing performance, while memory devices can achieve good data retention characteristics. If these two devices are designed on the same circuit, they can achieve good data processing and storage performance at the same time, but correspondingly , the technological process will become relatively complicated and the cost will be high. For some special function devices, such as the driver circuit (Driver) of high-voltage devices, the data required to be stored is not much, and the proportion of the storage device in the entire circuit is small, so the logic process can be used to manufacture such a storage device. [0003] The most critical performance to measure the quality of this stora...

AI Technical Summary

Problems solved by technology

Since the self-aligned barrier layer (Salicide block, SAB) in the conventional logic process is relatively thin, the memory device manufactured by the conventional logic process has poor data retention

It is known from experiments that a thicker SAB layer can obtain good data retention. However, when the SAB oxide layer reaches a certain thickness, such as more than 1,000 Å, the removal of the SAB layer becomes relatively difficult, and the process control also becomes very complicated

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