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Bistable programmable resistance type random access memory

A resistive random, storage layer technology, applied in static memory, digital memory information, information storage, etc.

Inactive Publication Date: 2008-04-30
MACRONIX INT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Manufacture of these devices with very small dimensions is problematic, and process variations for larger memory devices must meet tighter specification requirements

Method used

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  • Bistable programmable resistance type random access memory
  • Bistable programmable resistance type random access memory
  • Bistable programmable resistance type random access memory

Examples

Experimental program
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Embodiment Construction

[0108] A description of embodiments and methods of the present invention is now provided, and please refer to the diagrams shown in FIGS. 1-17 in conjunction. It should be understood that the disclosed specific embodiments are not intended to limit the present invention, but the present invention can be implemented using other features, elements, methods and embodiments. The same elements generally have the same reference numerals in different embodiments.

[0109] Figure 1 shows an illustration of a memory array 100, the manner in which it is implemented will be described here. As shown in FIG. 1 , a common source line 128 , a word line 123 and a word line 124 are arranged substantially parallel to each other in the Y direction. The bit line 141 and the bit line 142 are substantially parallel to each other and arranged in the X direction. Therefore, a Y-decoder and a word line driver located in a block 145 are coupled to the word lines 123 and 124 . An X-decoder and a set of...

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Abstract

A bistable resistance random access memory comprises a plurality of memory cells where each memory cell having multiple memory layer stack. Each memory layer stack includes a conductive layer overlying a programmable resistance random access memory layer. A first memory layer stack overlies a second memory layer stack, and the second memory stack overlies a third memory layer stack. The first memory layer stack has a first conductive layer overlies a first programmable resistance random access memory layer. The second memory layer stack has a second conductive layer overlies a second programmable resistance random access memory layer. The second programmable resistance random access memory layer has a memory area that is larger than a memory area of the first programmable resistance random access memory layer.

Description

technical field [0001] The present invention relates to high-density memory devices based on programmable resistive memory materials, including metal oxide-based materials and other materials, and methods of manufacturing these devices. Background technique [0002] Phase change storage materials are widely used in read-write optical disks. The material has at least two solid phases, such as a general amorphous solid phase and a general crystalline solid phase. Laser pulses are applied to the readable and writable optical disc to switch the phase, and the optical properties of the material are read after the phase change. [0003] Phase change memory materials, such as chalcogenide materials and the like, can be changed in phase by appropriate current flow in the integrated circuit. The general amorphous state has the characteristics of higher resistivity than the general crystalline state, which can quickly sense the specified data. These properties have drawn attention ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/24H01L21/82G11C11/56
CPCB82Y10/00G11C13/0069G11C11/5685G11C2213/32G11C2213/31G11C11/5678G11C2213/34G11C13/0007G11C13/0004H01L45/145G11C13/0014G11C13/0016G11C11/5664G11C11/16H01L45/04G11C2213/77H10N70/20H10N70/881H10N70/231H10N70/8836H10N70/8828H10N70/8833H10N70/063H10N70/883
Inventor 何家骅赖二琨
Owner MACRONIX INT CO LTD
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