109results about How to "Little change in resistance" patented technology

The invention discloses PTC graphene heating printing ink and a preparation method thereof. The PTC graphene heating printing ink is prepared from the following components in percentages by mass: 50% to 70% of a binder, 9% to 21% of a solvent, 1% to 3% of an additive, 10% to 20% of a conductive filler and 5% to 20% of a PTC functional material. The preparation method comprises the following steps: (1) firstly stirring and dispersing the binder, the solvent and the additive for 20 to 30 min, then adding the PTC functional material into stirring equipment for stirring for 8 to 12 min, and finally adding the conductive filler for uniform stirring to obtain a coarse paste; and (2) carrying out four to six times of three-roller grinding on the coarse paste so as to obtain the PTC graphene heating printing ink. The invention also discloses a heating film. The heating film comprises an organic polymer base material film, the PTC graphene heating printing ink, a conductive silver paste, conductive copper foil and an organic polymer adhesive film. The PTC function of the graphene heating film is increased, the potential safety hazard problem of an existing graphene heating film is eliminated, and the practicability is improved.

A copper foil with a resistance layer is provided, wherein the variation value is small when it is made into a resistance element, the adhesion with the resin substrate to be laminated with is able to be sufficiently maintained, which has an excellent characteristics as a resistance element for a rigid and a flexible substrate. A copper foil with a resistance layer of the present invention comprises a copper foil on one surface of which a metal layer or alloy layer is formed from which a resistance element is to be formed, the surface of the metal layer or alloy layer being subjected to a roughening treatment with nickel particles. A method of production of a copper foil with a resistance layer of the present invention comprises: forming a resistance layer of phosphorus-containing nickel on a matte surface of an electrodeposited copper foil having crystals comprised of columnar crystal grains wherein a foundation of the matte surface is within a range of 2.5 to 6.5 μm in terms of Rz value prescribed in JIS-B-0601; and performing roughening treatment to a surface of the resistance layer with nickel particles wherein a roughness is within a range of 4.5 to 8.5 μm in terms of Rz value prescribed in JIS-B-0601. The alloy layer is for example formed from phosphorus-containing nickel.

The invention relates to a two-dimensional airfoil type test platform comprising an upper turnplate unit (1), a lower turnplate unit (3) and a test theme unit (2), the turnplate unit (1) is connected with the test theme unit (2), the test theme unit (2) is connected with the lower turnplate unit (3), the turnplate unit (1) is connected with an H-shaped beam in the floor position on the wind tunnel, and the lower turnplate unit (3) is connected with a wind tunnel turnplate. The two-dimensional airfoil type test platform has the advantages that the weight of a model is independent of a resistance component, a variation range in load of the resistance component along the axon is not big, and relatively small resistance changes are easy to measure. Another advantage is that an outlaid balance is not prone to being affected by high-voltage high-frequency discharge of an electrode on the model surface.

The technique of preparing a semiconductive rubber by adding a conductivity imparting agent to resin matrix is so general but controlling the exhibiting conductive properties to a semiconductive range is difficult and in the technique of imparting conductivity by using an electronic conductive agent such as carbon black, uniform dispersion within the system is difficult and this often causes the problems of the sample fluctuation of the electric properties and voltage dependency of the obtained semiconductive rubber. The semiconductive resin composition of the present invention comprises (A) an oxyalkylene polymer having at least one hydrosilylizable alkenyl group in each molecule, (B) a compound having at least two hydrosilyl groups in each molecule, (C) a hydrosilylizing catalyst, and (D) an ionic conductivity imparting agent or (E) a nonionic surfactant. The present invention also provides a semiconductive member having an extremely small fluctuation of resistance due to voltage applied and environment and small change in resistance due to continuous use, which is suitable for electrophotographic devices. The semiconductive member of the present invention comprises a metallic supporting member, a semiconductive elastic layer formed around the exterior of the metallic supporting member and at least one surface layer formed around the exterior of the semiconductive elastic layer, wherein the member has a specific resistance and resistance ratio.

The invention discloses a graphene/polyimide composite membrane and a preparation method thereof. According to the preparation method, in-situ polymerization is carried out on polyimide in graphene to enable dispersion between the graphene and the polyimide to be relatively uniform, bonding between the graphene and the polyimide to be relatively tight and the polyimide to be used for more fully welding a graphene sheet layer, membrane gaps are filled, and the graphene/polyimide composite membrane with the thickness being 3-8 microns, good flexibility and excellent heat conduction performance is prepared, wherein preferably, the thermal conductivity of the membrane can reach 1176.46-1545.57W.m<-1>.K<-1>, the membrane can be repeatedly bent for 400 times, and the resistance ratio of the membrane is smaller than 1.1. According to the preparation process, the graphene/polyimide acid composite membrane is prepared by utilizing an interface self-assembly method firstly, and then imidizing, carbonizing and graphitizing a graphene oxide/polyimide acid composite membrane to obtain the graphene/polyimide composite membrane finally. The composite membrane can be widely applied to solving the heat dissipation problem in the field of portable wearable electronic equipment, flexible electronic devices and the like.

With the press fitting type spring connector of the present invention, a contact pin 20 having a space inside is housed inside a space of a tube 10 in a slidable manner, along the axial center of the tube 10. A spring shaped touch ring 30 is mounted on an outer surface of the contact pin 20. Of two coils of the touch ring 30, the second coil has a larger diameter than the first coil, the first coil is always in contact with the contact pin 20, and the second coil is always in contact with the tube 10. A coil spring 40 has a tip housed inside the space of the contact pin 20, and a base section housed inside the tube 10. Accordingly, with the press fitting type spring connector of the present invention, housing the contact pin 20 inside the tube 10 along the axial center of the tube 10 makes it possible to always obtain stable electrical characteristics because of the touch ring 30 provided on the outer surface of the contact pin 20, and enables miniaturization.

The invention relates to the field of tower type solar heat power generation research, discloses a simulation device for a solar cavity type heat absorber, and is applicable to a simulation performance test of a cavity type heat absorber in the tower type solar heat power generation system. The simulation device comprises a drum and a hexagonal prism shaped heat absorbing cavity, wherein a side surface of the heat absorbing cavity is provided with a daylight opening; a dead backside wall, a left backside wall and a right backside wall of the heat absorbing cavity are arranged opposite to the daylight opening; a dead backside boiling tube, a left backside boiling tube and a right backside boiling tube are respectively arranged close to the dead backside wall, the left backside wall and the right backside wall; a superheat tube is arranged between the daylight opening and the dead backside wall; and the dead backside boiling tube, the left backside boiling tube, the right backside boiling tube and the superheat tube are respectively communicated with the drum. The simulation device is characterized in that the dead backside boiling tube, the left backside boiling tube, the right backside boiling tube and the superheat tube are made of stainless steel pipe coils which are directly heated by a power supply.

The invention provides a device for measuring internal resistance of storage batteries. The device comprises a single chip microcomputer, a standard resistor, an amplification driving circuit, a metal-oxide-semiconductor field-effect transistor, a voltage synchronous acquisition unit and an internal resistance computation unit; the single chip microcomputer is used for controlling a storage battery to generate millisecond-level discharge current and comprises a current output unit, and the current output unit is used for generating constant current with a millisecond period and outputting the constant current intermittently; the standard resistor is connected with the storage battery, and a resistance value of the standard resistor is known; the amplification driving circuit is used for outputting square waves of voltage according to the constant current outputted by the current output unit so as to drive the metal-oxide-semiconductor field-effect transistor; the metal-oxide-semiconductor field-effect transistor is turned on and off intermittently according to the current outputted by the single chip microcomputer; the voltage synchronous acquisition unit is used for acquiring voltage of the storage battery; and the internal resistance computation unit is used for computing the internal resistance of the storage battery according to the resistance value of the standard resistor, voltage of the standard resistor and the voltage of the storage battery. The device has the advantage that problems of severe damage to storage batteries, high quantity of potential safety hazards and complexity and costliness of an existing measuring deice in the prior art are solved.

The invention provides a transmitting end driving circuit and method. The transmitting end driving circuit comprises a calibration control unit, wherein the calibration control unit generates a calibration control signal changing along with process, power voltage or temperature; A current calibration unit that generates a calibration current based on the calibration control signal; A bias voltagegeneration unit that generates a bias voltage on the basis of the calibration current; The output stage driving unit which is used for amplifying the to-be-output signal based on the bias voltage andoutputting the amplified to-be-output signal; And an impedance matching unit that adjusts the output impedance based on the calibration control signal. the method includes: Generating a calibration control signal; Generating a calibration current based on the calibration control signal to obtain a bias voltage; Under the action of the bias voltage, amplifying a signal to be output, and obtaining astable output signal through impedance matching. According to the invention, current and resistance change caused by process, power supply voltage and temperature change is effectively reduced, the requirement of an HDMI 2.0 protocol on the amplitude change of the output voltage of the transmitting end is met, a better impedance matching effect is achieved, and the signal transmission quality iseffectively improved.

The invention relates to a negative temperature coefficient thermosensitive resistor with high resistance and low B value. The resistor is prepared by the following steps: respectively grinding and calcining the oxide of raw materials lanthanum, chromium, aluminum and silicon and the oxide of raw materials manganese, nickel, chromium and zirconium to prepare a single-phase material with even particle size and good dispersibility, and then carrying out dual-phase mixing, grinding, high-temperature sintering and packaging to obtain the negative temperature coefficient thermosensitive resistor with high resistance and low B value, wherein the parameters of the resistor are as follows: R 0 DEG C=12K omega +/- 2%, and B=2050K +/- 3%. The invention has the advantages of simple preparation process, convenient operation and stable quality, can measure and control temperature and compensate circuits within wider temperature zones. Compared with the coprecipitation method, the invention enormously reduces the production cost of elements, saves energy and significantly improves production efficiency.

The present invention discloses an infrared detector with a high-efficiency resonant cavity and a preparation method thereof. In order to improve the integration degree of the chip, the resonant cavity of the detector is arranged inside the silicon wafer, and compared with the conventional infrared detecting device, the vacuum chamber of the sensitive film is only a few micrometers in height, thecavity space is greatly reduced, a high vacuum is formed and maintained in an easier manner, and the heat loss of the sensitive layer caused by air convection can be avoided. The sensitive layer filmis arranged in the middle of the resonant cavity, and the upper reflective layer is a thin metal layer which is half-transflected on the back surface of the upper substrate; and the lower reflective layer is a thick metal layer which is totally reflected on the upper surface of the lower substrate, and the light reflects in a round trip in the resonant cavity to pass through the sensitive layer film for two times, so that the number of times of passing through the sensitive layer film is increased, and the light absorption rate is increased. The preparation method for the resonant cavity reflective layer is a conventional photolithography, coating and etching process, the process is simple and easy to implement, the metal pillars are respectively fabricated on the two substrates and finally assembled into a resonant cavity by flip chip bonding, and a skillful process, a low cost and high precision are achieved.

The invention provides a controlled equivalent resistance module, comprising an MOS tube MR for producing controlled resistance, a MOS tube MS for producing equivalent resistance value control voltage, an operation amplifier A1 for locking the source end voltage of the MOS tube MR and the MOS tube MS, a current transmitting module CV for adjusting the direction and size of the input current signal, a MOS tube MC for converting the input voltage signal into the current signal, and a current source IC for limiting the maximal resistance value. The equivalent resistance module can change the equivalent MOS resistance under the control of the input voltage or the input current, solving the technical problem that the equivalent resistance of the present MOS resistance is influenced by the process error, the bulk effect and the like, so that the equivalent resistance can not be controlled accurately.

The invention, which belongs to the technical field of conductive composite membranes, discloses a flexible conductive composite film for a sensor and a preparation method thereof, and a flexible sensor. The preparation method comprises the following steps that: organic silica gel membranes having salient point arrays are coated with graphene dispersion liquid and carbon nanotube dispersion liquidrespectively to obtain conductive silica gel membranes; and the sides, having salient point arrays, of the two conductive silica gel membranes are compressed in opposite and thus the coated graphenedispersion liquid and carbon nanotube dispersion liquid are arranged between the two organic silica gel membranes to obtain a flexible conductive composite film. According to the flexible conductive composite film disclosed by the invention, the pressure and the friction force can be sensed and distinguished simultaneously; the sensor has advantages of high sensitivity and good tolerance performance and is not easy to damage; and the preparation process is simple and the cost is low. The continuous mass production is realized.

An electronic device of the present invention includes at least one electrode (Au electrode 65) and an organic molecule layer (semiconductor layer 14) formed adjacent to the electrode, and in which charge transfers between the layer and the electrode. The organic molecule layer includes a plurality of first organic molecules containing a conjugated π electron that composes a π conjugate plane (64). A plurality of second organic molecules is bonded chemically to a surface of the electrode at an interface between the electrode and the organic molecule layer. The second organic molecule contains a conjugated π electron that composes a π conjugate plane (67a). The second organic molecule is a molecule having a structure in which the π conjugate plane (67a) and the surface of the electrode form an angle within a predetermined range when the second organic molecule is bonded chemically to the surface of the electrode.

The invention discloses an antioxidant conductive copper nanowire film, and a preparation method and application thereof. The preparation method comprises the following steps of: uniformly dispersingcopper nanowires in an organic solvent or an aqueous solution to prepare a copper nanowire film, and carrying out reduction treatment on the copper nanowire film, dissolving 2-methyl phenylimidazole or benzimidazole in a formic acid-copper formate water buffer solution, and adjusting the pH value until the 2-methyl phenylimidazole or benzimidazole is just completely dissolved to obtain an antioxidant solution, and immersing the copper nanowire film subjected to reduction treatment into a prepared antioxidant solution, carrying out antioxidant treatment, and blow-drying after treatment to obtain the antioxidant conductive copper nanowire film. The prepared antioxidant nanowire film does not influence the conductivity of the copper nanowire film, also does not influence the transparency of the copper nanowire film, has a very good antioxidant effect, solves the key problem of unstable conductivity of the copper nanowire film, and the possibility that the copper nanowire film replaces ITOto be applied to the field of transparent flexible electrodes is achieved.

The invention relates to a composite negative pole piece, a preparation method thereof and a lithium ion battery. The negative pole piece comprises a current collector metal-metal lithium composite substrate and a carbon fiber-lithium-containing metal composite structure arranged on the current collector metal-metal lithium composite substrate. The carbon fiber-lithium-containing metal composite structure comprises a three-dimensional skeleton and lithium-containing metal, wherein the mass ratio of the three-dimensional skeleton to the lithium-containing metal is (1-18): 6. Gaps of the skeleton are filled with the lithium-containing metal. The three-dimensional skeleton comprises carbon fiber, a polymer, a surfactant and a toughening agent in a mass ratio of (60-80): (10-30): (1-5): (0-5).According to the composite negative pole piece, a three-dimensional skeleton is filled with metal lithium, the composite negative pole piece with light weight and high strength is obtained, stable and uniform deposition of metal lithium is facilitated under high current density, the integrity and uniformity of an SEI film are improved, the conditions of pulverization and lithium death of a lithium piece are improved, the growth of lithium dendrites can be inhibited to a certain extent, and meanwhile, the composite negative pole piece has good interface performance with an electrolyte.