4results about How to "Good operating characteristics" patented technology

The present invention provides a semiconductor relay module, which can ensure stable operating characteristics and is easy to design a circuit substrate. The first input circuit and the second input circuit are connected to the first input terminal and the second input terminal in a package. The third input circuit is connected to the first input terminal and the third input terminal, or to the second input terminal and the third input terminal in the package. The first output circuit is connected to the first output terminal and the first connecting wire in the package. The second output circuit is connected to the second output terminal and the first connecting wire in the package. The third output circuit is connected to the third output terminal and the first connecting wire in the package. The first monitoring terminal is connected to the first connecting wire in the package. A portion of the first monitoring terminal is configured to be exposed to the outside of the package.

The switch electric appliance comprises a shell, a contact support, a counterforce spring, a contact system and two electromagnetic systems, the two electromagnetic systems are oppositely arranged on two sides of the contact system, the two electromagnetic systems each comprise an upper armature and a coil for driving the upper armature to move, the upper armatures of the two electromagnetic systems are connected through a linkage shaft, the top side of the contact support is provided with a linkage groove, the linkage shaft is installed in the linkage groove, the two electromagnetic systems drive the contact support to move linearly against the action force of the counterforce spring through the linkage shaft, the contact support drives the moving contact to contact the static contact, and the contact support drives the moving contact to separate from the static contact under the action of the counterforce spring. The switch electric appliance has the advantages that the two electromagnetic systems are oppositely arranged on the two sides of the contact system, the height of the switch electric appliance is reduced, the contact support is connected with the two electromagnetic systems through the linkage groove arranged on the top side for accommodating the linkage shaft, the height space is not additionally occupied, and the contact support is convenient to disassemble and assemble.

The present invention provides an electromagnetic relay capable of ensuring a large insulation distance with a movable contact piece. The movable component is made of an electrical insulator. The movable component can slide relative to a housing along a moving direction. The movable component includes a retaining portion and a connecting portion. The retaining portion retains a first movable contact piece. The connecting portion is connected to a movable iron core. The connecting portion includes a locking groove and a locking protrusion. The end of the movable iron core is arranged in the locking groove. The locking protrusion presses the end of the movable iron core in the locking groove. The locking protrusion has a shape extending along a supporting direction.

A display device and a method of manufacturing the same are provided. The display device includes: a substrate including a display area and a driving circuit area; a first transistor in the display area and including a first active layer on the substrate and a first gate electrode on the first active layer; a first gate insulating layer between the first active layer and the first gate electrode and entirely covering the first active layer; a second transistor in the driving circuit region and including a second active layer on the substrate and a second gate electrode on the second active layer; a second gate insulating layer between the second active layer and the second gate electrode, covering a portion of the second active layer overlapping the second gate electrode, and exposing other portions of the second active layer; and a first oxide semiconductor layer between the first gate insulating layer and the first gate electrode.