Heat radiation method for LED high-power tube wafer

Abstract

The invention relates to semiconductor wafer encapsulation technique, specifically a heat radiation method of a LED high power tube wafer in LED wafer encapsulation course. The method comprises the steps of: in the course of combining the LED wafer and a wafer base seat, firstly, painting copper tin alloy solder on the wafer base seat evenly, and then, putting the LED wafer tinned on the bottom on the solder, pressurizing and heating up the wafer to the melting point temperature of the tin copper solder, melting down the solder and welding with the tin on the bottom of the wafer, and sticking the wafer on the base seat after the solder and the tin are solidified with the temperature reduction. The invention can achieves the good electric conduction and heat conduction performance for the connection between the wafer and the wafer base seat, therefore effectively prolonging the service life of the wafer.

Description

technical field [0001] The invention relates to a packaging technology of a semiconductor chip, in particular to a heat dissipation method for an LED high-power tube chip used in the LED chip packaging process. Background technique [0002] The working current of LED high-power tubes is 350mA or above, and the area of ​​the chip is about 1mm 2 The current density is more than twice that of traditional low-power LEDs. When working, the heat is very high. The PN junction temperature of the LED chip is about 120°C. If this temperature exceeds this temperature, the performance of the chip will drop sharply. The bottleneck of heat dissipation seriously restricts the high-power LED. tube development. Traditional heat dissipation generally uses silver paste to fix the chip on the aluminum substrate. On the one hand, because aluminum is not easy to process, and the thermal conductivity is limited (the thermal conductivity of aluminum base is about 150m.w / k), the thermal expansion c...

AI Technical Summary

Problems solved by technology

Traditional heat dissipation generally uses silver paste to fix the chip on the aluminum substrate. On the one hand, because aluminum is not easy to process, and the thermal conductivity is limited (the thermal conductivity of aluminum base is about 150m.w / k), the thermal expansion coefficient is relatively large, which is easy to make the chip and The aluminum base is peeled off; on the other hand, since the main components of the silver glue are silver and epoxy resin, after curing, its thermal resistance is high and the thermal conductivity is poor (generally around 3-17m.w / k). A large amount of heat cannot be quickly dissipated, resulting in serious performance deterioration of the device at high temperatures