The invention relates to the field of a diode production technology, in particular to a fabrication method of a rectifier diode. The method comprises the steps of silicon wafer ultrasonic sanding, silicon wafer cleaning, quartz frame and quartz lead cleaning, diffusion, detection and diffusion source fabrication. The method is characterized in that a primary perfect diffusion technology of liquid phosphorus, boron and platinum sources is adopted, the optimization distribution of the minority carrier lifetime is realized with the absorption of phosphorosilicate glass, the open pipe diffusion is adopted, the temperature of a diffusion furnace is 1249-1251 DEG C, the diffusion time is 12-15h, the phosphorus source, the boron source and platinum micropowder are placed in, and a P-type area requires that R P=1.1-1.3R/ohm and XjP=87-93 micrometers. Compared with the prior art, the method has the benefits that 1), the uniformity of surface concentration of a silicon wafer is improved and 20-22h is shortened compared with a paper source diffusion technology, and 2), the service life is increased by about 1500h compared with a common diode.