Semiconductor memory and method for forming same

Abstract

The forming method of a semiconductor memory comprises a semiconductor substrate which comprises an IA area and an IB area, and gate dielectric layers and gates are formed on the semiconductor substrate sequentially, the gate dielectric layer of the IA area is an electric charge trap area, while the gate dielectric layer of the IB area is a non-electric charge trap area, an active power extension area or a leaking extension area is formed on the IA area and the IB area of the semiconductor substrate, a source electrode or a drain electrode is formed on the IA area and the IB area of the semiconductor, correspondingly the invention also provides a semiconductor memory and a semiconductor device and the forming method thereof; the semiconductor memory formed by the invention has the function of double bytes storage so as to realize the high-density storage function, at the same time, the logic circuit and the storage circuit formed by adopting the invention can be compatible with each other.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a semiconductor memory and a forming method thereof. Background technique [0002] A non-volatile semiconductor memory device, such as a flash memory device, is capable of storing data when the semiconductor device is powered off. The memory cells of the flash memory device may include electrically isolated floating gates, respectively on the first and second sides of the floating gates in the substrate. and a control gate configured to control the floating gate. Typically, the threshold voltage of a flash memory cell depends on the amount of charge stored in the floating gate. Data stored in the flash memory cells can be detected by sensing the amount of change in the cell current of the flash memory cells caused by the threshold voltage difference. [0003] The single-chip system (System-on-Chip, SoC) system generated by the integration of the flash semiconductor memor...

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Problems solved by technology

[0007] The problem solved by the present invention is that the semiconductor storage circuit and the logic circuit in the prior art are poorly integrated, and it is difficult to realize high-density storage

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