Semiconductor memory and method for forming same
A semiconductor and memory technology, applied in the field of semiconductor memory and its formation, can solve the problems of poor integration between semiconductor memory circuits and logic circuits, and difficulty in realizing high-density storage, and achieve high integration and high-density storage functions.
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[0044] The essence of the invention is a method for integrating a semiconductor memory and a logic CMOS circuit. The semiconductor memory is formed by forming a charge trap in a gate dielectric layer of a MOS transistor. The invention provides a method for forming a semiconductor memory and its structure: for a MOS transistor whose gate dielectric layer is made of silicon oxide, silicon nitride or a combination thereof, ionization is carried out to the gate dielectric layer of the storage circuit region on the semiconductor substrate Implantation forms charge traps so as to have the ability to store charges, and at the same time, ion implantation is not performed in the logic circuit area on the semiconductor substrate. The present invention provides a semiconductor with a core circuit area, which is the I region, and an input and output circuit region, which is the II region. Substrate, and then by ion implantation in the core storage circuit area of the I region, that is, t...
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