Complementary type metal oxidizing layer semiconductor noise generator
A noise generator and oxide layer technology, applied in the direction of noise generation, differential amplifiers, DC-coupled DC amplifiers, etc., can solve the problems of high power consumption of noise generators, shortening the working distance of labels, and insufficient noise, etc., to achieve reduction Power consumption, effects of eliminating magnetic modulation effects
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[0027] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.
[0028] Such as figure 1 as shown, figure 1 A block diagram of a low power consumption CMOS noise generator provided by the present invention, the noise generator includes: a bias circuit 10 , a split-drain CMOS transistor current mirror 11 and a differential amplifier 12 .
[0029] Wherein, the bias circuit 10 is used to provide a DC operating point for the split-drain CMOS transistor current mirror and the differential amplifier. The split-drain CMOS transistor current mirror 11 is used to convert and amplify the tiny noise current signal into a larger differential voltage signal and output it to the differential amplifier. The differential amplifier 12 is used to convert the differential double-ended signal input by t...
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