Method for controlling semiconductor silicon dies etching technique

Abstract

The invention discloses a feedback control method of a semiconductor silicon chip etching process. Plasma spectral information of the plasma in an etching cavity is detected through the prior optical emission spectra OES on the etching cavity which is used for the end-control to the etching process when an end point of the etched silicon chip is detected. The detected spectrum information is processed, and according to the processing result, the adjustable quantity of the etching process parameter is determined, and the process parameter is adjusted, to realize the feedback control of the etching process to the semiconductor silicon chip. Additionally integrated online check-up equipment is saved, a complex feedback control is carried on, the control process is simple, the control is precise, and the cost is low.

Description

technical field [0001] The invention relates to a process control technology, in particular to a feedback control method for semiconductor silicon chip etching process. Background technique [0002] At present, in semiconductor silicon wafer processing technology, there are two main aspects of the advanced control method (Advanced Process Control, APC) of the processing technology, one is the fault diagnosis technology, and the other is the feedback control technology. In the feedback control technology, the feedback control methods used are different for different processes. [0003] In the etching process, the general etching line width is 90nm or less in the etching technology, and its feedback control process is as follows: figure 1 As shown, the integrated measurement equipment is usually used to judge the process result in real time during the process or process, and input this signal into the feedback controller to adjust the process parameters. In the feedback cont...

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Problems solved by technology

[0004] Feedback control of this technology usually requires additional purchase of OCD, and then the integration of software and hardware, which often costs a lot of human resources and costs, and because the measurement principle of OCD is to use optical signals, after model establishment and fitting, it becomes a silicon chip. As a result of CD, the process of model establishment requires very professional optical knowledge and detailed data on the structure of the film layer on the surface of the silicon wafer, so such a process is often complicated

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