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Annealing method for enhancing transverse diffusion metal oxide semiconductor sparking resistance

An oxide semiconductor and annealing treatment technology, which is applied in the manufacture of semiconductor/solid-state devices, electrical components, circuits, etc., can solve the problems that affect the real shape of the PN junction at the drain end and reduce the breakdown voltage of the device, so as to improve the shape and improve the durability The effect of improving breakdown performance and breakdown resistance

Inactive Publication Date: 2008-07-02
GRACE SEMICON MFG CORP
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Problems solved by technology

Using the Tsuprem4 process simulator simulation of Synopsys, it is confirmed that the abnormal diffusion of boron ions in the N drift region will even affect the true shape of the drain PN junction (as shown in Figure 2), resulting in a significant decrease in the breakdown voltage of the device

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  • Annealing method for enhancing transverse diffusion metal oxide semiconductor sparking resistance
  • Annealing method for enhancing transverse diffusion metal oxide semiconductor sparking resistance

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Embodiment approach

[0013] As shown in Figure 3, the present invention provides an annealing treatment method for improving the breakdown resistance of laterally diffused metal oxide semiconductors, which is applied after the trench oxide liner is formed and before the drift region light doping process. annealing the trench oxide liner in a nitrogen monoxide atmosphere;

[0014] The atmospheric conditions of nitric oxide are standard atmospheric pressure, 1100° C., flow rate of 2 liters per minute, and time of 15 minutes.

[0015] As shown in Figure 3, the trench oxide liner refers to the trench silicon oxide liner, and the thermally grown silicon oxide liner (200 Ȧ) repairs and prevents damage to the trench surface, making the corners of the active region smoother effect. Silicon nitride is used as a barrier layer for subsequent processes. The nitrogen monoxide annealing process of the present invention can only penetrate the silicon oxide liner, and a chemical reaction occurs at the interface...

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Abstract

An annealing treatment method for enhancing the sparking resistance of a lateral diffusion metal oxide semiconductor is applied after a groove oxide gasket is formed and is applied before the light dope working procedure to the drift region. In the method, the groove oxide gasket is annealed in the atmosphere of the nitrix oxide. The annealing treatment method for enhancing the sparking resistance of the lateral diffusion metal oxide semiconductor provided by the invention can obviously improve the shapes of the drain and the bulk silicon PN and enhance the parking resistance of the lateral diffusion metal oxide semiconductor.

Description

technical field [0001] The invention relates to an annealing treatment method for improving the breakdown resistance of laterally diffused metal oxide semiconductors. Background technique [0002] Lateral Double Diffused MOS (LDMOS) high-voltage devices are widely used in chips such as LCD panel drivers and power management. The cross-sectional view is shown in Figure 1. The biggest feature of the device structure is that it adopts field plate and lightly doped drift region technology, so that it can withstand higher voltage. The simulation of the Medici device simulator by Synopsys and the actual wafer electrical test show that the breakdown of the device does not occur on the surface (that is, at the junction of the surface gate and the drain PN junction) like ordinary MOS, but at the drain The PN junction junction with bulk silicon. [0003] To form this device structure, the manufacturing process needs to be adjusted to place the doping of the drift region before the g...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/336H01L21/3105
Inventor 王磊孙凌
Owner GRACE SEMICON MFG CORP