Semiconductor device and fabrication method thereof

Abstract

A semiconductor device including a first insulating layer having a hydroxyl radical formed over a semiconductor substrate; a line layer having a plurality of line patterns formed over the first insulating layer, the plurality if line patterns being arranged such that a spatial gap is provided therebetween; a fluorine-doped second insulating layer formed in the spatial gap between respective line patterns; and a multilayered diffusion prevention layer including a first oxide layer for suppressing an increase of a dielectric constant between the plurality of line patterns and a second oxide layer for preventing the diffusion of fluorine from the fluorine-doped second insulating layer into the first insulating layer.

Description

[0001] This application claims the benefit of Korean Patent Application No. 10-2006-0137359 filed on December 29, 2006, the entire contents of which are hereby incorporated by reference. technical field [0002] The present invention relates to a semiconductor device and a manufacturing method thereof, and more particularly to a semiconductor device having a fluorine-doped insulating layer and a manufacturing method thereof. Background technique [0003] A semiconductor device may have a highly integrated structure including line layers with spatial gaps. However, such devices exhibit increased parasitic capacitance, causing delays in signal transfer and also signal interference. [0004] To alleviate such problems, semiconductor devices may incorporate low-k dielectrics as interlayer insulating layers to fill space gaps between line patterns and insulating layers. A fluorine-doped oxide layer can be used as an insulating layer. Fluorine-doped oxide layers can have good pr...

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Problems solved by technology

HF causes problems of generating bubbles in the insulating layer 12 or causes corrosion in metals or oxides

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