Impedance matching method and device

Abstract

The invention relates to an impedance matching method and an impedance matching the same, wherein the method comprises the following steps of: separating the harmonic frequency signals from the fundamental frequency signals in the radio frequency input signals, performing frequency division processing on the harmonic frequency signals by using frequency division unit and transforming the harmonic frequency signals into sub fundamental frequency signals which have the same frequency as the fundamental frequency, and impedance matching the fundamental frequency signals and the sub fundamental frequency signals into a matching state. Therefore, the implementing of the invention can reduce the reflection power to the lowest and thus guarantees the yield rate of the semi-conduct production crafts.

Description

technical field [0001] The invention relates to the technical field of microelectronics, in particular to an impedance matching method and an impedance matching device. Background technique [0002] Impedance matching is a part of microelectronics. It is mainly used on transmission lines to achieve the purpose that all high-frequency microwave signals can be transmitted to the load point without signal reflection back to the source point, thereby improving energy efficiency and extending the radio frequency system. life and improve wafer yield. [0003] With the development of microelectronics technology, plasma equipment is widely used in the manufacturing process of semiconductor devices, and the impedance matching device is a key component used in plasma equipment. Its specific applications are as follows: figure 1 Shown: [0004] The RF power supply outputs RF power to excite the gas in the reaction chamber into plasma to etch the semiconductor device, but since the ou...

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Problems solved by technology

[0006] Although the existing impedance matching device can suppress the reflection of the output power of the RF power supply to a certain extent, and make the output power of the RF power supply as large as possible to the reaction chamber, the filtering characteristics of the RF power supply will deteriorate due to load changes. At this time, the RF power supply Harmonic frequency signals will appear in the output power of the output power, and the impedance matching device in the prior art cannot respond to the harmonic frequency signals, which will generate a large reflected power, thereby affecting the stability of the plasma, and causing serious damage to the semiconductor manufacturing process technology. bad influence

[0007] To sum up, the existing impedance matching device cannot match the harmonic frequency signal generated by the RF power supply, and cannot meet the requirements of suppressing power reflection

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