Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Solar battery laser marking device

A solar cell and laser marking technology, used in laser welding equipment, welding equipment, metal processing equipment, etc., can solve the problems of inability to mark large-format thin-film batteries and special graphics, and achieve high work efficiency and stable laser power output. , the effect of reducing working hours

Inactive Publication Date: 2008-07-16
李毅
View PDF3 Cites 24 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since the manufactured thin film batteries are getting bigger and bigger, and the previous laser marked thin film battery products are basically simple graphics composed of straight lines, the existing technology cannot mark large format thin film batteries and special graphics

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Solar battery laser marking device
  • Solar battery laser marking device
  • Solar battery laser marking device

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0035]Example 1, on a substrate with a size of 355.6mm×406.4mm×0.7mm, the laser marking shape is a regular octagon with a circular transparent window in the middle of the single-format marking of a circular amorphous silicon thin-film solar cell (the workbench is not drawn, Same principle figure 1 )

[0036] Fabrication of the front electrode pattern: ITO, ZnO or SnO with a size of 355.6mm×406.4mm×0.7mm 2 The transparent conductive film is placed with the glass film side up on the Picture 1-1 In the No. 1 marking area, start the large-format infrared laser marking system, import the marking pattern of the front electrode of the battery, and set the marking range of the galvanometer scanning system to 360mm×410mm, using a single-format marking method , etch the continuous conductive film on the substrate into independent small pieces of required shape and size, such as Figure 4 The front electrode graph is shown in 7. The wavelength of the infrared laser is 1064nm, the la...

example 2

[0040] Example 2, embodiment figure 1 , m=2, n=4, same as above to produce amorphous silicon thin-film solar panels with unit cell spacing of 10mm and external dimensions of 1000mm×2000mm×3.0mm.

[0041] Front electrode graphic production: put the composite transparent conductive film glass film with a size of 1000mm×2000mm×3.0mm facing up, place it on the X-Y cross-linking work platform, start the large-format infrared laser marking system, and import the front electrode of the battery for marking Graphics, and set the marking range of the galvanometer scanning system to 500mm×500mm, divide the 1000mm×2000mm×3.0mm substrate to be marked into 8 marking areas of 500mm×500mm, and use multi-format marking method, marking 100 insulated isolation lines parallel to the long side with a spacing of 10mm on the continuous conductive film of the substrate, see Figure 7 The part shown in 1'. In this way, the continuous conductive film on the substrate is etched and divided into 100 re...

example 3

[0042] Example 3, see embodiment figure 1 , Laser marking amorphous silicon: Place the substrate film with the coated amorphous silicon photoelectric conversion layer facing down on the X-Y cross-linked loading platform, start the large-format green laser marking system, and import the battery amorphous silicon label Engraving graphics, and set the marking range of the galvanometer scanning system to 500mm×500mm, divide the 1000mm×2000mm×3.0mm substrate to be marked into 8 marking areas of 500mm×500mm, and use multi-format marking In the corresponding position of the front electrode pattern area on the deposited amorphous silicon substrate, the amorphous silicon layer is etched according to the design pattern requirements, and the continuous amorphous silicon film on the substrate is etched into 100 strips parallel to the long side. Marking lines with a spacing of 10mm expose the lead-out pattern of the front electrode, and the distance between the marking line engraved on amo...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
electrical resistanceaaaaaaaaaa
Login to View More

Abstract

The invention relates to equipment for marking solar batteries by laser and belongs to the amorphous silicon thin-film solar battery processing field. The invention aims to improve the marking speed and accuracy of the solar battery. The technology is characterized in that a computer program is used to control an X-Y axis to accurately and electrically control a translation workbench and a laser galvanom scanning system to make time-sharing work. When the X-Y axis is translated, a laser vibrating mirror fixed on a Z-axis track stops scanning. The deflection angle of a reflection mirror of the laser galvanom scanning system is controlled by a vibrating mirror motor, the deflection of the vibrating mirror motor is controlled through a D / A card by the computer to ensure that a focusing spot runs according to the graphs, the characters and the linear tracks preset by the computer. The invention has the advantages that: the equipment can make a high-speed and large-format marking to the amorphous silicon thin-film solar battery, the maximum linear speed is 400m / min, and the invention can mark complicated graphs. The weight and the operation speed of the mechanical platform can not affect the accuracy of the micro marking route; the invention has high production efficiency and low cost.

Description

technical field [0001] The invention relates to a laser marking device specially used for the production of amorphous silicon thin film solar cells, and belongs to the technical field of laser marking and positioning. Background technique [0002] At present, laser marking technology has been widely used in the production of amorphous silicon thin film solar cells. The processing technologies used in the laser marking system can be roughly divided into the following types: one is to fix the laser output marking head, The crystalline silicon solar cells, referred to as the substrate, are placed on the X-Y cross-linking screw system loading work platform, and the graphic marking on the substrate is completed through the movement of the X-Y cross-linking screw system. The second type is to fix the laser output marking head on the X screw rod of the separate X-Y screw rod system, and fix the loading working platform on the Y screw rod of the separate X-Y screw rod system, throug...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/20B23K26/00G05B19/04B23K26/064B23K26/082B23K26/362
CPCY02P70/50
Inventor 李毅李全相
Owner 李毅
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products