Polymetal interconnecting layer combined aerial on chip

A combined antenna and interconnection layer technology is applied in the direction of antennas, antenna arrays, independent antenna unit combinations, etc. It can solve the problems of low practicability, occupying chip area, and large communication transmission loss, etc., to achieve wide process adaptability and improve Effects of transmission gain and increased impedance bandwidth
CN101227026BInactive Publication Date: 2012-04-25SHANGHAI JIAOTONG UNIV
3 Cites 0 Cited by

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
SHANGHAI JIAOTONG UNIV
Publication Date
2012-04-25
Estimated Expiration
Not applicable · inactive patent

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention relates to an assembly antenna with on-chip polymetallic interlocking layer belonging to the technology field of integrated circuits, which comprises a polymetallic interlocking layer radiating element, a feed perforation, a short-circuiting perforation, a silica dioxide layer and a silicon chip, wherein the center of the polymetallic interlocking layer radiating element is connected with the feed perforation, and the two ends of the polymetallic interlocking layer radiating element are connected with the short-circuiting perforation, thereby forming the polymetallic interlocking layer assembly antenna. Due to adopting the polymetallic interlocking layer composite structure, the invention is capable of effectively increasing radiation volume of the on-chip antenna, reducing the measurement of the on-chip antenna, increasing impedance bandwidth of the on-chip antenna, notability improving transmission gain of the on-chip antenna for applying wireless interconnection, and not occupying any additional chip area, otherwise, the invention is totally compatible for main flow CMOS technology, is fit for the silicon chip with miscellaneous specific resistance without additional impedance match components, at the same time is fit for multilayer low-temperature co-melting ceramic technology, and which has extensive technology adaptability.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention relates to an antenna in the technical field of integrated circuits, in particular to an on-chip multi-metal interconnection layer combined antenna. Background technique

[0002] With the continuous development of microelectronics technology, the scale of integrated circuit components increases geometrically as described by Moore's law. Recently, with the maturity and application of micron and submicron technology, people pay more and more attention to the signal integrity of interconnection, that is, global interconnection transmission delay, interconnection power consumption and interconnection reliability. Based on the above considerations, many scholars have proposed to replace the existing interconnection system with wireless interconnection, that is, using on-chip integrated antenna, power amplifier (PA), low noise amplifier (LNA), codec (Coder / Decoder) And other components of the wireless transceiver system to achieve functions su...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More