Realization method for 3-D integrated circuit based on SOI round slice

Abstract

The invention discloses an implementation method of three-dimensional integrated circuit based on SOI disk. The method includes: etching removing the SOI device layer which perpendicularly interconnects with the silicon (SOI) disk on the insulator manufacturing the integrated circuit; utilizing the organic polymer to temporarily bond the SOI disk on the supplementary disk so as to remove the displacing the SOI layer to the supplementary disk by the SOI disk substrate; utilizing the organic polymer to implement the back to front permanent bonding of temporary displacing the SOI disk with another bottom disk manufacturing the integrated circuit so as to form the stack disks; front etching the silicon dioxide layer and the permanent bonding layer form the stack disks and filling metal for implementing the perpendicular interconnection of the SOI layer disk with the bottom disk. The invention manufactures the perpendicular interconnection on the insulating position so as to solve the problem that the lateral wall of the deep hole is insulating, and reduces the manufacturing degree of difficulty of the three-dimensional integration. The method can be used in integrated circuit and micro sensor field for implementing three-dimensional integration of the back to front bonding of the multilayer chip.

Description

technical field [0001] The invention belongs to the field of semiconductor manufacturing technology, three-dimensional integration technology, and sensor manufacturing technology, and particularly relates to a method for realizing a three-dimensional integrated circuit based on an SOI wafer. Background technique [0002] The continuous reduction of integrated circuit feature size and the continuous improvement of integration not only make the feature size of integrated circuits gradually approach the physical limit, but also make integrated circuits encounter insurmountable development bottlenecks in terms of design, manufacturing and cost. At present, the feature size of complementary metal-oxide-semiconductor (CMOS) integrated circuits has entered 65nm, and the speed of the device itself is continuously increasing, and 1 billion CMOS devices can be integrated on a chip area per square centimeter. This makes the total length of metal interconnect lines on high-end integrate...

AI Technical Summary

Problems solved by technology

However, due to the very high requirements for the flatness of the surfaces of the two bonded wafers, which generally reach the atomic level, that is, sub-nanometer level, strict surface planarization treatment must be carried out before bonding, which becomes a manufacturing difficulty and increases In addition, direct bonding of silicon dioxide has high requirements on annealing temperature. Usually, annealing below 600°C is difficult to meet the requirements of direct bonding of silicon dioxide, which affects the bonding quality; Can only withstand post-annealing below 450°C, otherwise metallization will be compromised

[0006] In order to solve the problem of damage to integrated circuits caused by the high temperature process required for direct bonding of silicon dioxide in the manufacturing process of three-dimensional integrated circuits on SOI wafers, the present invention proposes a method for realizing multi-layer wafer integration by using organic polymer thermocompression bonding

Images