Carrying bench

Abstract

The invention provides a carrying table, which can reduce the surface resistance of a top plate in order to obtain stable detecting result and avoid leakage current from the top plate and further reduce making cost. The carrying table (20) includes: the top plate (21) made of oxygen-free copper with a carrying surface of a semiconductor chip (W); insulated covering films (22) made of alumina for continuously covering the lower surface (21A) and the side surface (21B) of the top plate (21); and a cooling sleeve (23) made of oxygen-free cooper and configured in a contact with the insulated covering film (22).

Description

Placement technical field The present invention relates to a mounting table on which an object to be inspected is used when inspecting an object to be inspected such as a semiconductor chip, and more specifically, to a mounting table capable of obtaining a stable applied voltage, for example. Background technique An inspection device generally has a loading chamber for carrying an object to be inspected (for example, a semiconductor chip), and a probe chamber for inspecting electrical characteristics of the semiconductor chip carried from the loading chamber. The probe chamber includes: a movable mounting table for mounting semiconductor chips, a probe card arranged above the mounting table, and an adjustment mechanism for adjusting a plurality of probes of the semiconductor chip and the probe card, The conditioned semiconductor chip is brought into electrical contact with a plurality of probes, and predetermined electrical characteristic inspections are performed based on...

AI Technical Summary

Problems solved by technology

However, the top plate 1 of the conventional mounting table shown in FIG. 3 has its main body formed of a ceramic sintered body 1A, and the first and second electrodes 1B and 1C are formed by ion plating on the upper and lower surfaces of the ceramic sintered body 1A. Therefore, It is difficult to maintain a certain quality of the ceramic sintered body 1A, and the first and second electrodes 1B and 1C formed on the surface are extremely thin at about 1 μm, which increases the surface resistance and causes errors in the results of the electrical characteristic inspection of the semiconductor chip. In addition, Since the top plate 1 forms the first and second electrodes 1B and 1C on the surface of the ceramic sintered body 1A by ion plating, there is a disadvantage of high manufacturing cost of the top plate 1

In order to lower the surface resistance of the first and second electrodes 1B and 1C, there is a method of thickening the first and second electrodes by electroless plating or electrolytic plating. However, in this case, due to temperature changes during high-temperature inspection , the coating will peel off from the ceramic sintered body 1A

On the other hand, in the case of the techniques of Patent Documents 1 and 3, since the top plate is composed of an insulating material and a conductor film on it, the surface resistance of the conductor film is high, which will have a bad influence on the inspection results.

In addition, in the case of the technique of Patent Document 2, since the top plate and the shield plate are adjacent to each other through an insulating spacer, and the two are close to each other, current leaks from the top plate to the shield plate.

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