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Semiconductor element with noise suppressing function and its manufacturing method

A manufacturing method and technology for suppressing noise, applied in the fields of semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., which can solve problems such as poor component operation and limited noise suppression.

Active Publication Date: 2008-09-24
ADVANCED SEMICON ENG INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But in actual operation, the distance between the integrated circuit and the decoupling capacitor inside the package will limit the effect of noise suppression, resulting in poor operation of the component

Method used

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  • Semiconductor element with noise suppressing function and its manufacturing method
  • Semiconductor element with noise suppressing function and its manufacturing method
  • Semiconductor element with noise suppressing function and its manufacturing method

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Experimental program
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Embodiment Construction

[0027] Please refer to FIG. 1 to FIG. 16 . FIG. 1 to FIG. 16 are schematic diagrams of manufacturing a semiconductor device with noise suppression function according to a preferred embodiment of the present invention. As shown in FIG. 1 , firstly, a chip 12 is provided, which has an active surface 14 , and the chip 12 includes a plurality of bonding pads 16 , 18 , 20 disposed on the active surface 14 . Wherein, the pads 16 , 18 , and 20 can be respectively ground pads, power pads, or signal pads according to the design of the components. In this embodiment, the pad 16 is a ground pad, the pad 18 is a signal pad, and the pad 20 is a power pad. But not limited to the configuration disclosed in this embodiment, the positions and corresponding functions of the pads can be freely adjusted according to the requirements of the process or product, which should fall within the scope of the present invention. Then cover a protective layer 22 on the active surface 14 of the wafer 12 and...

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PUM

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Abstract

The invention discloses a semiconductor element with the function of restraining noises and a method thereof. The semiconductor element comprises a wafer, at least a first welding pad and at least a second welding pad which are arranged on the active surface of the wafer, an insulation layer arranged on the active surface of the wafer and lead the first welding pad and the second welding pad to be exposed, a first conducting layer which is arranged on the insulation layer and connected with the first welding pad electrically, a dielectric layer arranged on the first conducting layer, a second conducting layer which is arranged on the dielectric layer and connected with the second welding pad electrically, a plurality of patterning areas in periodic arrangement which are arranged in at least one of the first conducting layer and the second conducting layer and at least a conductive circuit connecting at least two patterning areas. The semiconductor element with the function of restraining noises can restrain the noises produced in the operation of the semiconductor elements, thus leading the semiconductor element to achieve better efficiency of electric property.

Description

technical field [0001] The invention relates to a semiconductor element, in particular to a semiconductor element with the function of suppressing noise. Background technique [0002] Integrated circuits are almost ubiquitous in our daily lives. Its main application areas are not only the computer industry which has already been integrated into daily life, but also widely used in various consumer and defense electronic products and communication products, including audio, television, radar, and wireless phones. However, as the operating frequency is greatly increased and in order to produce faster product devices, a serious power disturbance, called simultaneous switch noise (SSN), is easily formed on the chip and integrated circuit. [0003] Generally speaking, when the element is in the switching state and the instantaneously changing current passes through the inductance in the return path, and then forms an AC voltage drop, the instantaneous switching noise caused will ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/485H01L23/58H01L21/60
CPCH01L2924/0002
Inventor 王陈肇王维中
Owner ADVANCED SEMICON ENG INC