Bi-S binary system pyroelectric material and production method

A binary system and technology of thermoelectric materials, applied in the direction of thermoelectric device junction lead-out materials, thermoelectric device manufacturing/processing, etc., to achieve the effect of simple process, low sintering temperature, and short synthesis and molding time

Inactive Publication Date: 2008-09-24
UNIV OF SCI & TECH BEIJING
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Problems solved by technology

The above analysis shows that although the Bi-S binary system is a potential thermoelectric material, the preparation of Bi-S binary system bulk thermoelectric materials by mechanical alloying and spark plasma sintering has not been reported so far.

Method used

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  • Bi-S binary system pyroelectric material and production method
  • Bi-S binary system pyroelectric material and production method
  • Bi-S binary system pyroelectric material and production method

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Embodiment Construction

[0018] First, the mechanical alloying method (MA) was used to prepare Bi-S binary compound precursor fine powder. The method is to mix the high-purity Bi and S elemental powders according to the atomic ratio of 2:x (x=2.5-3.5), put them together into a planetary high-energy ball mill for mechanical alloying under the protection of an inert gas, and dry-mill to synthesize the compound. Then carry out wet grinding, and finally dry to obtain the fine powder of Bi-S binary compound, and then sinter the powder into a block by using discharge plasma technology. The sintering temperature is 200-500° C., the holding time is 2-8 minutes, and the pressure is 20-60 MPa.

[0019] Table 1 has provided several preferred embodiments of the present invention:

[0020]

[0021] In summary, the present invention can quickly and easily prepare a thermoelectric bulk material of Bi-S binary system through mechanical alloying and discharge plasma technology.

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Abstract

A Bi-S binary system thermoelectric material and a preparation method thereof belong to the technical field of energy materials. The method is divided into two parts, synthesis and molding of a compound. The Bi and S simple substances with high purity are measured and proportioned according to chemical composition, then high energy ball milling is carried out with the protection of inert gases and certain rotating speed; after the compound is synthesized by dry milling, wet milling is carried out; finely superfine powder of the Bi-S binary compound is acquired by drying. The molding process acquires block material by spark plasma sintering. The spark plasma sintering acquires Bi-S binary compound block with high density and tiny crystal grains. As the spark plasma sintering has the advantages of short time, comparatively low sintering temperature, etc., compact micro structure with tiny crystal grains can be acquired by controlling the sintering technique. The method preparing the Bi-S binary system thermoelectric material by mechanical alloying and spark plasma sintering has the advantages of simple and convenient technique, short synthesis and molding time, etc.

Description

technical field [0001] The invention belongs to the technical field of energy materials, and in particular provides a Bi-S binary system thermoelectric material and a preparation method, involving mechanical alloying (Mechanical Alloying, MA) and spark plasma sintering (Spark PlasmaSintering, SPS) technology. Background technique [0002] Group V-VI Binary Compound Bi 2 m 3 The (M=S, Se, Te) alloy system is currently the thermoelectric material with the best performance at room temperature, and it is also one of the earliest and most mature thermoelectric materials studied, with a large Seebeck coefficient and low thermal conductivity. An important performance index to measure thermoelectric materials is thermoelectric figure of merit. Power generation and cooling efficiency are directly proportional to thermoelectric figure of merit. For a certain material, the figure of merit of its thermoelectric performance is given by the following formula: ZT = α 2 σT / κ, where α is...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L35/16H01L35/34C22C12/00C22C1/05B22F3/105
Inventor 张波萍赵立东李敬锋刘玮书
Owner UNIV OF SCI & TECH BEIJING
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