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Method for manufacturing semiconductor integrated circuit device

A manufacturing method and integrated circuit technology, which can be used in semiconductor/solid-state device manufacturing, semiconductor devices, circuits, etc., and can solve problems such as interlayer insulating film etching

Active Publication Date: 2008-10-01
SANYO ELECTRIC CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0012] On the other hand, it is conceivable to increase the film thickness of the resist, but in spite of this, a part of the interlayer insulating film etc. on the wiring structure 12 may be etched.

Method used

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  • Method for manufacturing semiconductor integrated circuit device
  • Method for manufacturing semiconductor integrated circuit device
  • Method for manufacturing semiconductor integrated circuit device

Examples

Experimental program
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Embodiment Construction

[0026] Hereinafter, embodiments of the present invention will be described with reference to the drawings.

[0027] FIG. 3 is a schematic plan view of the photodetector 50 of the present embodiment. Figure 4 It is a schematic cross-sectional view of the light receiving unit 51 and the wiring structure 52 passing through the line B-B' shown in FIG. 3 and perpendicular to the cross section of the semiconductor substrate 54A.

[0028] The photodetector 50 for detecting reflected light has a light receiving unit 51 on the surface of a semiconductor substrate 54A. The light receiving unit 51 includes a PIN photodiode (PD) diffusion layer 74 divided into four segments in a 2×2 array. The PD diffusion layer 74 is formed, for example, as a cathode region in which a high concentration of n-type impurities is diffused. In addition, the PD diffusion layers 74 are separated from each other by the separation diffusion layer 73 . The isolation diffusion layer 73 is formed on the surface...

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PUM

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Abstract

Cracks are generated in a resist film part used to form an opening part in a photoreceptor part, whereby etching is performed as far as the inter-layer insulating film in unintended portions. In order to prevent this, the resist pattern used as an etching mask is formed in a shape that disperses the stress. The stress is generated because the resist is hardened by post baking after having been exposed and developed. In order to disperse the stress, the opening part of the resist pattern is formed in a planar shape that has no corners.

Description

technical field [0001] The present invention relates to a semiconductor integrated circuit device in which an integrated circuit is formed on a semiconductor substrate including a light receiving portion, and more particularly to a method of manufacturing a semiconductor integrated circuit device in which an opening is formed by etching an interlayer insulating film laminated on the substrate. Background technique [0002] In recent years, optical discs such as CD (Compact Disk) and DVD (Digital Versatile Disk) occupy most of the market as information recording media. These optical disc playback devices detect reflected light of laser light irradiated along the track of the optical disc with a photodetector and reproduce recorded data based on changes in the intensity of the reflected light. [0003] FIG. 1 is a schematic plan view of a conventional photodetector 10 . [0004] figure 2 It is a schematic cross-sectional view of the light receiving unit 11 and the wiring str...

Claims

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Application Information

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IPC IPC(8): H01L21/822H01L21/768H01L21/311G03F1/00G03F1/68H01L21/027H01L21/3065H01L31/10
CPCG03F7/168G03F7/40H01L21/31144
Inventor 西胁智弘兼子一重山田哲也野村洋治
Owner SANYO ELECTRIC CO LTD