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Conjugated polymer containing iridium complex and preparation of electrical storage device thereof

A conjugated polymer, iridium complex technology, used in static memory, chemical instruments and methods, digital memory information, etc., can solve problems to be further developed, achieve good machining performance, reduce read and write voltage, reduce processing cost effect

Inactive Publication Date: 2008-10-08
NANJING UNIV OF POSTS & TELECOMM
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, systematic research on related performance needs to be further carried out.

Method used

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  • Conjugated polymer containing iridium complex and preparation of electrical storage device thereof
  • Conjugated polymer containing iridium complex and preparation of electrical storage device thereof
  • Conjugated polymer containing iridium complex and preparation of electrical storage device thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036]The ITO conductive glass was washed with water, acetone and 2-propanol in ultrasonic for 15 minutes respectively. Using the compound with the following structure as the storage material, prepare a toluene solution with a concentration of 10mg / mL, and spin-coat it on the ITO conductive glass. The solvent was removed under vacuum and the polymer film was about 50 nm thick. Al is then evaporated as the upper electrode. The device test area is 0.4×0.4 mm2. The schematic diagram of the device structure is shown in the figure below. Measure the current-voltage curve of the device to determine whether the material has electrical bistability, turn on and off voltage, and repeated erasing and writing capabilities; measure the constant voltage read / write pulse current to evaluate the current difference between the "0" and "1" signals of the device, and Read, write, and erase stability of the device; test the current response of the device in the on and off states, evaluate the ...

Embodiment 2

[0039] The ITO conductive glass was washed with water, acetone and 2-propanol in ultrasonic for 15 minutes respectively. Using the compound with the following structure as the storage material, prepare a toluene solution with a concentration of 10mg / mL, and spin-coat it on the ITO conductive glass. The solvent was removed under vacuum and the polymer film was about 50 nm thick. Then evaporate Au as the upper electrode. The device test area is 0.2×0.2 mm2. Measure the current-voltage curve of the device to determine whether the material has electrical bistability, turn on and off voltage, and repeated erasing and writing capabilities; measure the constant voltage read / write pulse current to evaluate the current difference between the "0" and "1" signals of the device, and Read, write, and erase stability of the device; test the current response of the device in the on and off states, evaluate the read / write speed of the device, etc.; use the accelerated aging test to evaluate...

Embodiment 3

[0042] The ITO conductive glass was washed with water, acetone and 2-propanol in ultrasonic for 15 minutes respectively. Using the compound with the following structure as the storage material, prepare a toluene solution with a concentration of 10mg / mL, and spin-coat it on the ITO conductive glass. The solvent was removed under vacuum and the polymer film was about 50 nm thick. Cu was then evaporated as the upper electrode. The device test area is 0.15×0.15 mm2. Measure the current-voltage curve of the device to determine whether the material has electrical bistability, turn on and off voltage, and repeated erasing and writing capabilities; measure the constant voltage read / write pulse current to evaluate the current difference between the "0" and "1" signals of the device, and Read, write, and erase stability of the device; test the current response of the device in the on and off states, evaluate the read / write speed of the device, etc.; use the accelerated aging test to e...

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Abstract

The preparation methods for conjugated polymer containing iridium complexes and the related electrical memory component of conjugated polymer comprise the following steps: ITO conductive glass is washed by water, acetone and 2-propanol respectively in ultrasonic wave; the conjugated polymer containing iridium complexes in the patent claim 1 is used as memory material to prepare polymer solution with concentration of 0.1-500mg / mL; the polymer solution is then spin-coated on the ITO conductive glass; the solvent is removed under vacuum to obtain the polymer membrane. Gold, aluminum, copper and other metal are used as the upper electrode after vapor plating, while the ITO conductive glass is used as the lower electrode; the polymer material is used as memory medium to prepare and obtain the monolayer polymer memory component. Such polymer contains donating electron units (fluorine unit and others) and withdrawing electron units (iridium complexes) at the same time. The materials presented in the invention can form membrane through spin-coating, without the problem of uneven disperse of heavy metal complexes; based on needs, other functional groups can be introduced into the polymer molecular chain to be expected to prepare highly-efficient and stable memory components.

Description

technical field [0001] The invention relates to a class of conjugated polymer electric storage materials containing iridium complexes and the preparation of electric storage devices thereof. It belongs to the field of electric storage new materials and technologies. Background technique [0002] The rapid development of digital products such as mobile phones, PDAs, digital cameras, digital video cameras, flash drives, and MP3 players has led to a sharp increase in demand for electrical storage chips. This shows that electrical storage has become the strongest growth point in the semiconductor market. Switches and storage devices based on inorganic semiconductor materials have been widely used in today's information field due to their mature technology. However, in recent years, due to the limitations of lithography technology and the exponential increase in production costs as the size decreases, this material has gradually reached the limit of its research and development...

Claims

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Application Information

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IPC IPC(8): C08G61/00C09K11/06G11C13/00
Inventor 黄维刘淑娟凌启淡赵强许文娟
Owner NANJING UNIV OF POSTS & TELECOMM
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