Solid-state imaging device and imaging apparatus

Abstract

The present invention provides a solid-state imaging device and a imaging apparatus. The solid-state imaging device including a plurality of pixels that are provided on a semiconductor substrate, and that include a plurality of photoelectric-conversion units and metal oxide semiconductor transistors that selectively read signals from the plurality of photoelectric-conversion units, an organic-photoelectric-conversion film disposed on the plurality of photoelectric-conversion units, and an organic-color-filter layer disposed on the plurality of photoelectric-conversion units. Only a signal corresponding to a first color is extracted through the organic-photoelectric-conversion film. Signals corresponding to a plurality of colors not including the first color are extracted by absorption spectroscopy using the organic-color-filter layer.

Description

technical field [0001] The present invention relates to a solid-state imaging device and an imaging device. Background technique [0002] The semiconductor image sensor is a solid-state imaging device, and includes a complementary metal oxide semiconductor (CMOS) sensor and a charge coupled device (CCD). The CMOS sensor includes a plurality of pixels having a photoelectric conversion unit that converts incident light into an electrical signal, and a Metal Oxide Semiconductor (MOS) transistor that selectively reads the electrical signal from each pixel. The CCD includes a plurality of pixels having a photoelectric conversion unit that converts incident light into an electrical signal, which is read from each pixel through a silicon substrate, and transfers signal charges. Both CMOS sensors and CCDs are semiconductor devices that read signals from pixels. Recently, CMOS sensors have attracted attention as imaging devices used in cameras of mobile phones, digital still camera...

AI Technical Summary

Problems solved by technology

However, this technique has substantial problems in that it is difficult to use the light entering the color image sensor sufficiently efficiently because the color filters themselves absorb light significantly.

In addition, this technique has the following problems: it is difficult to effectively use the pixels of the color image sensor because of spatial color separation; when the number of green pixels is small, the resolution of the luminance signal is reduced; When the number of is small, the resolution of the color signal is reduced, or a wrong color signal is produced

However, in this device, the color reproducibility is poor when utilizing the difference in absorption of light of different wavelengths in bulk silicon

For this reason, it is difficult to apply the device to the usual high-resolution image sensor

In addition, since the device configuration for extracting light corresponding to two colors through bulk silicon is complicated from a process point of view, the manufacturing cost is increased

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