Semiconductor lighting fixture having high-efficiency heat radiation structure and manufacture method thereof

A technology of heat dissipation structure and lighting lamps, which is applied in semiconductor devices of light-emitting elements, lighting and heating equipment, lighting devices, etc., which can solve the problems of poor heat dissipation performance and high manufacturing cost, and achieve simple and reliable structure, high heat dissipation efficiency, and uniform illumination Effect

Active Publication Date: 2011-05-04
孙卓
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Generally, LED lamps are casted with aluminum alloy materials as lamps with heat dissipation characteristics, and this process requires the production of multiple sets of molds with complex structures. Different molds need to be manufactured for different lamps, especially for large lamps such as street lamps. The manufacturing cost In addition, aluminum alloy lamps using casting technology have poor heat dissipation performance

Method used

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  • Semiconductor lighting fixture having high-efficiency heat radiation structure and manufacture method thereof
  • Semiconductor lighting fixture having high-efficiency heat radiation structure and manufacture method thereof
  • Semiconductor lighting fixture having high-efficiency heat radiation structure and manufacture method thereof

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Experimental program
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Effect test

Embodiment 1

[0018] Taking a street lamp as an example to describe the lamp structure of the present invention in detail, the lamp profile cross-sectional structure shown in Fig. 500mm, the length can be cut arbitrarily according to the needs; there is a screw installation groove 11 for installing the light source module on the surface, which is used for the installation and fixing of the light source module and the substrate; the light source substrate 1 is connected with the reflective support side plate 2, and the angle between them is 90-160 degrees; the thickness of the reflective support side plate 2 is 2-20mm, and the height is 10-50mm; the bottom of the reflective support side plate 2 has an installation edge 21 to facilitate the installation of the light source module 4; the surface of the reflective support side plate 2 is smooth A good reflective surface is used to reflect the light emitted by the light source module 4 and improve the luminous efficiency of the lamp;

[0019] Th...

Embodiment 2

[0023] According to different application requirements, the light source substrate 1 can be flat, as shown in Figure 1(a), or it can be a light source substrate with a certain angle, as shown in Figure 2(c), the light source substrate consists of two flat plates, Or as shown in Figure 2(d), the light source substrate is composed of three flat panels, or a curved panel with a certain radian to form the light source substrate, and the light distribution of the lamp can be flexibly performed through the included angle or radian to obtain uniform illuminance.

Embodiment 3

[0025] The light source module 4 in the power semiconductor lighting module shown in FIG. 3( e ) can be mounted on the bottom light source substrate 1 and the reflective support side plate 2 . The reflective support side plate 2 is connected to the bottom light source substrate 1, and the angle between them is 90-160 degrees. The number of light source modules 4 installed on the reflective support side plate 2 and the angle between the reflective support side plate 2 and the bottom light source substrate 1 can all affect the light output effect of the entire lamp, thereby achieving the purpose of dimming. If no light source module is installed on the side light source substrate of the power semiconductor lighting module shown in Figure 3(e), its structure is similar to that of the lighting module shown in Figure 1(a), at this time, the reflective support side plate 2 can be It is regarded as a side light source substrate.

[0026] The heat dissipation structure of the power s...

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Abstract

The invention relates to the technical field of semiconductor lighting, in particular to a semiconductor lighting lamp with an efficient radiating structure and a preparation method thereof. The lamp comprises a light source substrate, a reflection supporting lateral plate, a light source module and a radiator, etc. The light source substrate, the reflection supporting lateral plate and the radiator form an integrated aluminum alloy section structure by adopting an extrusion and stretching technique according to required modeling, and cut to form different lamp modules arbitrarily according to needs; an LED is directly pasted, arranged and welded on an aluminum base circuit board to prepare the light source module; the light source module is arranged on the surface of the light source substrate, and a glass face mask, a gasket and an elastic fixture are integrally arranged together. Compared with the prior art, the lamp and the method of the invention adopt the extrusion and stretching technique to manufacture the LED aluminum alloy lamp module, with simple and compact structure, high radiating efficiency, large luminous flux and even illumination intensity; the manufacture technique and the lamp are suitable for batch production with low cost; simultaneously, the lamp module is flexible, and can be cut to form different lamps arbitrarily according to application requirements.

Description

[technical field] [0001] The invention relates to the technical field of semiconductor lighting, in particular to a semiconductor lighting fixture with an efficient heat dissipation structure and a preparation method thereof. [technical background] [0002] Semiconductor lighting, that is, a solid light source made of high-brightness light-emitting diode LED (Light Emitting Diode), has many advantages such as long life, energy saving, environmental protection, and miniaturization. Luminous efficacy of lamps and fluorescent lamps. As a lighting application, the development trend of LED is to develop high-power chips with high luminous efficiency, so that the luminous flux of a single chip can be as high as possible to meet the needs of general lighting. With the increase of the power of the chip, the current required for the chip to emit light is getting larger and larger, causing local heat to increase the temperature of the chip and affecting the luminous efficiency, reli...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): F21S2/00F21V17/00F21V29/00F21Y101/02F21K9/20F21K9/90F21V29/76F21V29/89F21Y115/10
Inventor 孙卓曹俊辉孙鹏林丽峰
Owner 孙卓
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