Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Carbon thin film /silicon hetero-junction material possessing alcohol gas sensitive effect and method for making same

A gas-sensitive, silicon heterojunction technology, which is used in the analysis of materials, material inspection products, material analysis by electromagnetic means, etc. Problems such as detecting alcohol gas

Inactive Publication Date: 2008-12-31
CHINA UNIV OF PETROLEUM (EAST CHINA)
View PDF1 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The alcohol gas sensitivity of nano oxides usually has a better effect at high temperature, and the preparation process of sensors based on nanowires or nanotubes is also complicated
[0004] At present, there is no report on the detection of alcohol gas using the electrical properties of carbon thin film / silicon heterojunction materials

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Carbon thin film /silicon hetero-junction material possessing alcohol gas sensitive effect and method for making same
  • Carbon thin film /silicon hetero-junction material possessing alcohol gas sensitive effect and method for making same
  • Carbon thin film /silicon hetero-junction material possessing alcohol gas sensitive effect and method for making same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] Example 1, take graphite powder with a purity of 99.9% and make a pure graphite target by cold pressing. Pure carbon is sputtered onto a monocrystalline silicon substrate 1 with a thickness of 1.0 mm by magnetron sputtering, and a carbon film 2 with a thickness of about 100 nanometers is formed on the monocrystalline silicon substrate. The material is connected to a DC power supply 4, 3 is the contact point between the power line and the material, and 5 is an ammeter, which becomes a conductivity type alcohol gas sensor, such as figure 1 shown. The preparation parameters of the heterojunction material: the sputtering DC voltage is 0.50 kV, the sputtering DC current is 0.10 ampere, the sputtering deposition temperature is room temperature, and the sputtering time is 30 minutes. The sensitivity of the resistance of the sample at room temperature to alcohol gas and air has been tested, and the test results are as follows: image 3 shown. The results show that: in the at...

Embodiment 2

[0020] Example 2, take graphite powder with a purity of 99.9% and make a pure graphite target by cold pressing. Pure carbon is sputtered onto a monocrystalline silicon substrate 1 with a thickness of 1.0 mm by magnetron sputtering, and a carbon film 2 with a thickness of about 80 nanometers is formed on the monocrystalline silicon substrate. The material is connected to a DC power supply 4, 3 is the contact point between the power line and the material, and 5 is an ammeter, which becomes a conductivity type alcohol gas sensor, such as figure 1 shown. The preparation parameters of the heterojunction material: the sputtering DC voltage is 0.50 kV, the sputtering DC current is 0.10 ampere, the sputtering deposition temperature is room temperature, and the sputtering time is 20 minutes. The sensitivity of the resistance of the sample at room temperature to alcohol gas and air has been tested, and the test results are as follows: Figure 4 shown. The results show that: in the at...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a carbon thin film / silicon heterojunction material with the alcohol gas-sensitive effect and a preparation method thereof, the material uses a magnetron sputtering method to sputter a graphite target with the purity of 99.9 percent or an iron-graphite composite target which contains 0 to 10 percent (weight fraction) iron onto a polished silicon chip, thereby forming a layer of thin film with the thickness of 20 to 200nm. The carbon thin film / silicon heterojunction new material has obvious alcohol gas-sensitive effect and can be used for preparing an electrically conductive alcohol gas-sensitive sensor, the carbon thin film / silicon heterojunction material works under the room temperature, the preparation is simple, the miniaturization and the integration of devices are easily realized, the sensitivity is high, the response time is short, the stability is good, the production process is simple, the cost is low and the application prospect is broad.

Description

technical field [0001] The invention relates to a carbon film / silicon heterojunction material with alcohol gas sensitive effect and a preparation method thereof. Background technique [0002] Alcohol gas sensors have been widely used in environmental monitoring, chemical industry, safety and other fields. At present, most alcohol gas sensors are made of metal oxides (such as cadmium, indium, samarium oxides, etc.), carbon nanotubes, and composites of oxides and rare metals. The preparation process of metal oxides is relatively complicated, and often requires solution reaction at low temperature, drying, calcination at medium temperature, calcination at high temperature, aging and other processes. The whole process takes dozens of days, and some metal oxides are harmful to the human body ( Chinese invention patent: 98125730.5). Carbon nanotube sensors require relatively advanced microfabrication instruments. The conditions for the preparation of composites of oxides and ra...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G01N33/98G01N27/407
Inventor 薛庆忠李群严克友郝兰众夏丹
Owner CHINA UNIV OF PETROLEUM (EAST CHINA)
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com