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Reverse bias voltage induced double stable state nonvolatile semiconductor memory

A non-volatile, reverse bias technology, applied in the field of storage, can solve problems such as unstable setting voltage, unreasonable explanation of experimental phenomena, complex device switching characteristic mechanism, etc., to achieve storage effect and high density Effect

Inactive Publication Date: 2010-07-21
SUN YAT SEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0002] At present, non-volatile memory based on resistance is basically based on transition metal oxides. These oxides are generally polycrystalline, amorphous and non-stoichiometric compounds, and these factors make the switching characteristics of the device more complicated.
There are more or less problems in the various resistance switching mechanism models proposed so far, and it is impossible to make a reasonable explanation for the new experimental phenomena that appear
In addition, for unipolar resistive switching devices, the setting voltages corresponding to high and low resistances are very unstable, that is, high and low resistances cannot be set exclusively by a certain voltage

Method used

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  • Reverse bias voltage induced double stable state nonvolatile semiconductor memory
  • Reverse bias voltage induced double stable state nonvolatile semiconductor memory
  • Reverse bias voltage induced double stable state nonvolatile semiconductor memory

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Embodiment Construction

[0011] The present invention will be further described below in conjunction with the accompanying drawings and embodiments.

[0012] Such as figure 1 As shown, the present invention provides a reverse bias induced bistable nonvolatile memory, which includes SrTi 0.99 Nb 0.01 o 3 Semiconductor 1, located on SrTi 0.99 Nb 0.01 o 3 TiO on Semiconductor 1 2 Thin film 2, set on TiO 2 The metal electrode 3 on the film 2 and the SrTi 0.99 Nb 0.01 o 3 Another metal electrode 4 under the semiconductor 1 .

[0013] The metal electrode 3 is a plurality of independent point electrodes, and the other metal electrode 4 is a surface electrode.

[0014] In this embodiment, the two metal electrodes 3, 4 are both Pt electrodes, TiO 2 Film 2 is a single crystal film, and the structure of the memory is expressed as: Pt / TiO 2 / SrTi 0.99 Nb 0.01 o 3 / Pt.

[0015] In addition, the present invention uses molecular beam epitaxy on SrTi 0.99 Nb 0.01 o 3 Growth of stoichiometric singl...

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Abstract

The invention belongs to the technical field of storage, which particularly relates to a bistable non-volatile memory induced by a reverse bias. The memory comprises a SrTi0.99Nb0.01O3 semiconductor (1), a TiO2 thin film (2) arranged on the SrTi0.99Nb0.01O3 semiconductor (1), a metal electrode (3) arranged on the TiO2 thin film (2) and another metal electrode (4) arranged below the SrTi0.99Nb0.01O3 semiconductor (1). The bistable non-volatile memory has the advantages of high memory density, good stability, simple structure, etc.

Description

technical field [0001] The invention belongs to the technical field of storage, and in particular relates to a bistable nonvolatile memory induced by a reverse bias voltage. Background technique [0002] At present, non-volatile memory based on resistance is basically based on transition metal oxides, which are generally polycrystalline, amorphous and non-stoichiometric compounds, and these factors make the switching characteristic mechanism of the device more complicated. There are more or less problems in the various resistive switch mechanism models proposed so far, and it is impossible to make a reasonable explanation for the new experimental phenomena that appear. In addition, for unipolar resistive switching devices, the setting voltages corresponding to the high and low resistances are very unstable, that is, the high and low resistances cannot be set exclusively by a certain voltage. Contents of the invention [0003] Aiming at the shortcomings of the prior art, t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00G11C16/02
Inventor 吴曙翔李树玮
Owner SUN YAT SEN UNIV