Integrated preparation method for integrated circuit and capacitance type micro-silicon microphone single slice as well as chip

A technology of integrated circuits and silicon microphones, which is applied in the field of monolithic integrated chips, can solve problems such as high-temperature processes and achieve high-sensitivity effects

Active Publication Date: 2009-01-28
MEMSENSING MICROSYST SUZHOU CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The disadvantage of the third integration method is that after the IC is completed, in order not to affect the performance of the IC, there must be no high-temperature process in the subsequent MEMS device manufacturing process, because after the IC manufacturing process is completed, metals such as aluminum used as metal electrodes cannot withstand 400 ° C above high temperature

Method used

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  • Integrated preparation method for integrated circuit and capacitance type micro-silicon microphone single slice as well as chip
  • Integrated preparation method for integrated circuit and capacitance type micro-silicon microphone single slice as well as chip
  • Integrated preparation method for integrated circuit and capacitance type micro-silicon microphone single slice as well as chip

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Effect test

Embodiment 1

[0038] see Figure 1 to Figure 8 , the manufacturing method of the monolithic integration of the integrated circuit of the present invention and the capacitive micro-silicon microphone mainly comprises the following steps:

[0039] The first step: if figure 1 As shown, a substrate 20 is provided, one surface of which has a first region 22 for forming an integrated circuit and a second region 21 for forming a microsilicon microphone.

[0040] The second step: according to the standard semiconductor process flow, an integrated circuit that is compatible with the micro-silicon microphone is generated in the first region 22, and at the same time, a gate conductive layer 24 is formed in the second region 21 and covers the gate conductive layer 24 The dielectric insulating layer 25c of the integrated circuit can be a field effect transistor, a resistor and a capacitor, etc. For the sake of simplification, the integrated circuit is only described by taking a metal oxide field effec...

Embodiment 2

[0056] See Figure 11 and 12, the manufacturing method of this embodiment is similar to that of Embodiment 1, the difference is that the order of manufacturing the back plate and the sound-sensitive film is adjusted, that is, the first to third steps are executed sequentially according to the foregoing description, and then the fourth step is executed, That is, an additional film (that is, the first film layer 28) is formed on the gate conductive layer located on the second region by using a low-temperature process lower than 400° C. so that the additional film and the gate conductive layer are combined to form a back surface. The pole plate 28c is used as one pole of the capacitor, and then a plurality of air guide holes are formed on the back pole plate 28c by photolithography and corrosion, and then a sacrificial layer is formed on the additional film by a low temperature process, and then a low temperature process is used to form a sacrificial layer on the additional film....

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Abstract

The invention provides a monolithically integrated manufacturing method and a chip for an integrated circuit and a capacitor type micro-silicon microphone. The method comprises the following steps: firstly, a substrate with a first area and a second area is provided; secondly, according to the standard semiconductor technique flow, the integrated circuit with a grid conductive layer is manufactured on the first area, the grid conductive layer and a medium insulating layer covered on the grid conductive layer extend to the second area; and thirdly, the medium insulating layer on the second area is removed, and a first membrane layer, a sacrificial layer and a second membrane layer are generated in sequence on the exposed grid conductive layer by the low temperature technique below 400 DEG C, and then the sacrificial layer with the eroded part forms the capacitor type micro-silicon microphone, the exposed grid conductive layer and the first membrane layer are taken as one electrode of the capacitor, and the second membrane layer is taken as the other electrode of the capacitor, thereby realizing the monolithic integration of the integrated circuit and the capacitor type micro-silicon microphone.

Description

technical field [0001] The invention relates to a manufacturing method for monolithic integration of an integrated circuit and a capacitive microsilicon microphone and a monolithic integrated chip formed by the manufacturing method. Background technique [0002] A microphone is a transducer that converts sound signals into electrical signals. The basic structure of a condenser microphone includes a sensitive film as one pole of the capacitor and a back plate as the other pole of the capacitor. When a sound signal acts on the microphone, the sound pressure causes the sensitive film to deform, which in turn causes a gap between the sensitive film and the back plate. The capacitance changes, and this capacitance change can be converted into an electrical signal by the subsequent processing circuit. [0003] Since Bell Labs scientists invented the electret condenser microphone (ECM) in 1962, after decades of development, ECM has been widely used in various fields. However, the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H04R19/01H04R19/04H04R31/00
Inventor 李刚
Owner MEMSENSING MICROSYST SUZHOU CHINA
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