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Selective barrier polishing slurry

A slurry, water-based technology, applied in polishing compositions containing abrasives, other chemical processes, chemical instruments and methods, etc., can solve the problems of poor adhesion of adjacent layers and low mechanical strength

Inactive Publication Date: 2009-02-04
ROHM & HAAS ELECTRONICS MATERIALS CMP HLDG INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Additionally, the introduction of low-k and ultra-low-k dielectric films requires the use of milder CMP processes due to the low mechanical strength of the films and their poor adhesion to adjacent layers

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] Polishing tests used Coral from Novellus Systems, Inc. TM 200 mm wafers of carbon doped oxide (CDO), TEOS dielectric, tantalum nitride and electroplated copper. IC1010 from Rohm and Haas Electronic Materials CMP Technologies (Rohm and Haas Electronic Materials CMP Technologies) was used TM and embossed Politex TM The polishing pad polishes the wafer to obtain topographical data.

[0042] Mira (MIRRA) TM A rotary polishing platform polishes the sheet wafer. First step copper polishing using Eternal slurry EPL2360 and IC1010 on platforms 1 and 2 TM Polishing was performed with circular grooved polyurethane polishing pads using a Kinik AD3CG-181060 grid diamond conditioning disc. The polishing conditions of platform 1 are: platform rotation speed 93rpm, support rotation speed 21rpm, downward force 4psi (27.6 kPa), platform 2 conditions are: platform rotation speed 33rpm, support rotation speed 61rpm, downward force 3psi (20.7kPa). The polishing conditions of platform...

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PUM

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Abstract

The aqueous slurry is useful for chemical mechanical polishing a semiconductor substrate having copper interconnects. The slurry contains by weight percent, 0 to 25 oxidizing agent, 0.1 to 30 abrasive particles, 0.001 to 5 benzenecarboxylic acid, 0.00002 to 5 multi-component surfactant, the multi-component surfactant having a hydrophobic tail, a nonionic hydrophilic portion and an anionic hydrophilic portion, 0.001 to 10 inhibitor for decreasing static etch of the copper interconnects, 0 to 5 phosphorus-containing compound for increasing removal rate of the copper interconnects, 0 to 10 complexing agent formed during polishing and balance water, the hydrophobic tail having 6 to 30 carbon atoms and the nonionic hydrophilic portion having 10 to 300 carbon atoms.

Description

technical field [0001] The present invention generally relates to selective barrier layer polishing slurries. Background of the invention [0002] With the development of Ultra Large Scale Integration (ULSI) technology towards smaller line widths, new challenges are presented for the integration of conventional chemical mechanical polishing (CMP) methods. Additionally, the introduction of low-k and ultra-low-k dielectric films requires the use of milder CMP processes due to the low mechanical strength of the films and their poor adhesion to adjacent layers. In addition, increasingly stringent standards for defectivity place more demands on polishing slurries for low-k films. [0003] Integrating various low-k films into ULSI may require a large number of steps and introduce new technologies such as supercritical cleaning, dielectric and metallic capping layers, conformal deposition of barrier layers and copper, and Abrasive-free slurry for chemical mechanical planarization...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02
CPCC09G1/02H01L21/3212C09K3/1463H01L21/304
Inventor 叶倩萩卞锦儒
Owner ROHM & HAAS ELECTRONICS MATERIALS CMP HLDG INC