Extracting type layering processing method for optical proximity correction

A technology for optical proximity correction and processing methods, which is applied in electrical digital data processing, special data processing applications, instruments, etc., and can solve the problem that traditional processing methods are difficult to optimize the running time, the layout hierarchy is modified too much, and the flexibility and unity are reduced. It can improve the competitiveness of products, shorten the production cycle, and reduce the computing time.

Inactive Publication Date: 2010-06-16
ZHEJIANG UNIV
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Problems solved by technology

The above method needs to compare the graphics environment of each instance pairwise. If the number of instances is n, then its computational complexity is O(n 2 ), and the relatively large-scale graph comparison operation itself is time-consuming, which makes it difficult to optimize the running time of the traditional processing method; (3), too many modifications to the hierarchical structure of the layout result in the loss of hierarchical structure information, reducing the Flexibility and unity are not conducive to subsequent data information exchange such as debugging and feedback

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  • Extracting type layering processing method for optical proximity correction
  • Extracting type layering processing method for optical proximity correction
  • Extracting type layering processing method for optical proximity correction

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Embodiment Construction

[0032] The present invention will be further described below in conjunction with the accompanying drawings.

[0033] Extractive hierarchical processing method for optical proximity correction, the flow is as follows figure 1 shown, including the following steps:

[0034] 1) Determine the mutual influence distance of graphics by the parameters of the optical simulation model and the characteristics of the layout graphics;

[0035] 2) Extract the largest invariant graphics set of each unit in the layout except the top unit in a bottom-up order, and replace the original graphics of the corresponding unit;

[0036] 3) Add the remaining graphics to the parent unit of all instances of the unit;

[0037] 4) Perform optical proximity correction on the graphics contained in each unit, store the optical proximity correction results of all units back to the original unit, and obtain the final optical proximity correction result of the entire layout.

[0038] The mutual influence dist...

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Abstract

The invention discloses an extracting hierarchical processing method for optical proximity correction, which comprises steps of 1) determining the interactional distance of patterns according to parameters of an optical simulation model and characteristics of a layout pattern, 2) extracting maximum constant pattern sets of each unit excepts the top layer unit in the layout from bottom to top and replacing the original patterns of the corresponding unit, 3) adding the remaining patterns into the primary units of all instances of the unit, 4) performing optical proximity correction on patterns contained in each unit, and storing the results of the optical proximity correction in the original unit to obtain the finally optical proximity correction result of the overall layout. The method caneffectively reduce redundant calculation in the optical proximity correction process and redundant information in the resultant layout, thereby decreasing time of manufacturing high precision integrated circuit marks in condition of sub-wavelength lithography, reducing producing cost of integrated circuit products and shortening producing cycle.

Description

technical field [0001] The invention relates to an extractive hierarchical processing method for optical proximity effect correction, which is suitable for assisting in the manufacture of high-precision integrated circuit mask plates, and belongs to the field of integrated circuit computer aided design. Background technique [0002] When the minimum feature size and spacing of integrated circuits are reduced below the wavelength of the light source used in lithography, due to the inevitable effects of light diffraction and photoresist development and etching, the mask (Mask) pattern and silicon The graphics printed on the wafer will no longer be consistent, and the distortion of IC layout graphics transfer will increase significantly, seriously affecting the production yield of integrated circuits. This phenomenon is called "Optical Proximity Effect (OPE, Optical Proximity Effects)". Usually, the distortion phenomenon produced by the graphics actually printed on the silicon...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F17/50
Inventor 谢春蕾严晓浪史峥
Owner ZHEJIANG UNIV
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