Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Immersion self-adapting seal control device used for photo-etching machine

A self-adaptive sealing and control device technology, applied in the direction of photolithography exposure device, microlithography exposure equipment, etc., can solve the problems of filling flow field pressure fluctuations, increasing liquid leakage, interference force, etc., to achieve flow field High stability, avoid air bubble entrainment, reduce the effect of internal power

Inactive Publication Date: 2009-04-08
ZHEJIANG UNIV
View PDF5 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] (1) Due to the use of positive pressure liquid supply and negative pressure recovery, the pressures of the two are not easy to coordinate, and it is easy to cause pressure fluctuations and interference forces in the filling flow field, and lead to turbulent flow in the liquid and some undesirable and unpredictable effects
[0007] (2) The positive pressure liquid supply method makes the liquid inside the gap flow field have a higher pressure, and this force acts on the sealing structure, which increases the possibility of liquid leakage and affects the reliability of the seal.
[0008] (3) When the substrate is moving at a high speed, due to the effect of molecular adhesion, the liquid close to the substrate will move along with the substrate, which will cause the boundary shape of the flow field to change rapidly; this change occurs at different boundary positions They are all different, and the commonly used pressure equalization sealing method cannot adaptively compensate the boundary of the flow field, so it is difficult to effectively avoid a series of problems caused by it
During the high-speed movement of the substrate, once the external air or sealing liquid is involved or dissolved or diffused into the filling liquid, it will have a negative impact on the exposure quality

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Immersion self-adapting seal control device used for photo-etching machine
  • Immersion self-adapting seal control device used for photo-etching machine
  • Immersion self-adapting seal control device used for photo-etching machine

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0040] The present invention will be further described below in conjunction with drawings and embodiments.

[0041] Such as figure 1 As shown, it shows the assembly of the immersion adaptive sealing control device and the projection lens group according to the embodiment of the present invention. The device can be applied in step-and-repeat or step-and-scan lithography equipment. During the exposure process, the light emitted from the light source (not shown in the figure) (such as: ArF or F2 excimer laser) passes through the aligned mask plate (not shown in the figure), the projection lens group 1 and the immersion liquid The lens-substrate gap field exposes the photoresist on the surface of the substrate 3 .

[0042] Such as Figure 1 to Figure 5 It schematically shows the immersion adaptive sealing control device of the embodiment of the present invention, which is composed of a sealing member 2A and an adaptive sealing member 2B, wherein:

[0043] 1) Sealing member 2A: ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses an immersion self-adaptive sealing control device used in a lithography machine. The immersion self-adaptive sealing control device is arranged between a projection lens set and a substrate, and consists of a sealing element and a self-adaptive sealing member. When liquid forms the impact on the self-adaptive sealing member due to traction of the substrate, the device can absorb the impact formed by the high-speed moving liquid and converts the impact into power enhancing sealing; on the contrary, when the substrate draws the liquid away from the self-adaptive sealing member, the liquid prestored inside the device follows to enter a slit flow field to avoid gas bubble entrainment owing to the loss of the liquid at the boundary, meanwhile, the reduction of the liquid prestored inside the device reduces the sealing power of the self-adaptive sealing member, and the leaked liquid flows back to the inside of the slit flow field along with the substrate due to the reduction of obstruction. The liquid transmission mode of the immersion self-adaptive sealing control device adopts negative pressure recovery and free flow of a fluid injection end, which avoids the flow field fluctuation caused by the in-coordination between the injected fluid and the recovery pressure.

Description

technical field [0001] The invention relates to a liquid supply and recovery sealing device in an immersion lithography (Immersion Lithography) system, in particular to an immersion self-adaptive sealing control device for a lithography machine. Background technique [0002] Modern lithography equipment is based on optical lithography, which uses an optical system to accurately project and expose the pattern on the mask onto a substrate (such as a silicon wafer) coated with photoresist. It includes a laser light source, an optical system, a projection mask composed of chip patterns, an alignment system and a substrate covered with photosensitive photoresist. [0003] The immersion lithography system fills a certain liquid in the gap between the projection lens and the substrate, and increases the numerical aperture (NA) of the projection lens by increasing the refractive index (n) of the medium in the gap, thereby improving the resolution of lithography rate and depth of fo...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G03F7/20
Inventor 付新陈晖陈文昱杨华勇
Owner ZHEJIANG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products