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Method for manufacturing gallium nitride compound semiconductor light-emitting device, gallium nitride compound semiconductor light-emitting device and lamp using same

A technology of light-emitting element and manufacturing method, which can be applied to semiconductor devices, electrical components, electric solid-state devices, etc., can solve the problems of increased driving voltage and large resistance, and achieve high reliability, excellent light-emitting characteristics, and excellent light extraction efficiency. Effect

Active Publication Date: 2009-04-08
TOYODA GOSEI CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0013] However, the light-emitting element described in Patent Document 1 has a problem that a large resistance is generated between the light-transmitting positive electrode and the p-type semiconductor layer due to dry etching damage, and the driving voltage is extremely increased.

Method used

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  • Method for manufacturing gallium nitride compound semiconductor light-emitting device, gallium nitride compound semiconductor light-emitting device and lamp using same
  • Method for manufacturing gallium nitride compound semiconductor light-emitting device, gallium nitride compound semiconductor light-emitting device and lamp using same
  • Method for manufacturing gallium nitride compound semiconductor light-emitting device, gallium nitride compound semiconductor light-emitting device and lamp using same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach

[0063] However, the present invention is not limited to the following embodiments, and for example, components of these embodiments may be appropriately combined with each other.

[0064] The manufacturing method of the gallium nitride-based compound semiconductor light-emitting element of the present invention includes: figure 1 The first crystal growth process in which the n-type semiconductor layer 13, the light emitting layer 14, and the first p-type semiconductor layer 15 formed by gallium nitride-based compound semiconductors are sequentially stacked on the substrate 11 shown; The second crystal growth process of the p-contact layer (second p-type semiconductor layer) 16 formed of compound semiconductor; between the above-mentioned first crystal growth process and the second crystal growth process, there is An unevenness forming step for forming unevenness, and a heat treatment step for performing heat treatment after the unevenness forming step.

[0065] The manufactur...

Embodiment 1

[0166] figure 1 A schematic cross-sectional view showing a gallium nitride-based compound semiconductor light-emitting element produced in this example, figure 2 Its plan view is shown.

[0167] "Fabrication of Gallium Nitride-based Compound Semiconductor Light-Emitting Devices"

[0168] On a substrate 11 made of sapphire, a gallium nitride-based compound semiconductor layer is stacked through a buffer layer 12 made of AlN. This gallium nitride-based compound semiconductor layer includes an n-type semiconductor layer 13 , a light emitting layer 14 , and a first p-type semiconductor layer 15 , and is formed by stacking each layer in order. The n-type semiconductor layer 13 is sequentially stacked with an 8 μm thick base layer formed of undoped GaN, a 2 μm thick Ge-doped n-type GaN contact layer and a 0.02 μm thick n-type In 0.1 Ga 0.9 An n-type semiconductor layer formed by an N cladding layer; the light-emitting layer 14 is a 16nm thick GaN barrier layer doped with Si and...

Embodiment 2～6、 comparative example 1

[0191] Light-emitting elements of Examples 2 to 6 and Comparative Example 1 were fabricated in the same manner as in Example 1 except that the heat treatment conditions were changed to the conditions shown in Table 1 below. Then, the same evaluation as in Example 1 was performed, and the results are shown in Table 1 below.

[0192] Table 1

[0193]

[0194] As shown in Table 1, under the conditions specified in the manufacturing method of the present invention, the surface of the first p-type semiconductor layer 15 is formed with unevenness and heat treatment, and then the light-emitting elements of Examples 2 to 6 in which the p-contact layer 16 is stacked, emit light. The output power is more than 12mW, and the drive voltage is in the range of 3.3-3.8V.

[0195] In contrast, the light-emitting element of Comparative Example 1, which did not undergo heat treatment after forming unevenness on the surface of the first p-type semiconductor layer, had a lower luminous output ...

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Abstract

Disclosed is a method for manufacturing a gallium nitride compound semiconductor light-emitting device which can be operated at a low driving voltage, while having an excellent light extraction efficiency. Also disclosed are a gallium nitride compound semiconductor light-emitting device and a lamp using the same. Specifically disclosed is a method for manufacturing a gallium nitride compound semiconductor light-emitting device, which comprises a first crystal growing step wherein an n-type semiconductor layer (13) composed of a gallium nitride compound semiconductor, a light-emitting layer (14) and a first p-type semiconductor layer (15) are formed on a substrate (11) in this order; and a second crystal growing step wherein a second p-type semiconductor layer (16) composed of a gallium nitride compound semiconductor is further formed thereon. The method further comprises, between the first crystal growing step and the second crystal growing step, a corrugation forming step for forming recesses and projections on the surface of the first p-type semiconductor layer (15) and a heat treatment step for performing a heat treatment after the corrugation forming step.

Description

technical field [0001] The present invention relates to a method for manufacturing a gallium nitride-based compound semiconductor light-emitting element, and in particular, to a method for manufacturing a gallium nitride-based compound semiconductor light-emitting element with excellent light-emitting characteristics, a gallium nitride-based compound semiconductor light-emitting element, and a lamp using the same. [0002] This application claims priority based on Japanese Patent Application No. 2006-080883 for which it applied in Japan on March 23, 2006, The content is used here. Background technique [0003] In recent years, GaN-based compound semiconductor materials, which are nitride-based semiconductors, have attracted attention as semiconductor materials for short-wavelength light-emitting devices. GaN-based compound semiconductors are based on various oxides such as sapphire single crystals and Group III-V compounds as substrates. On this substrate, metal-organic chem...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/62H01L33/22H01L33/32H01L33/42H01L33/56H01L33/60
CPCH01L33/32H01L33/20H01L33/14H01L2224/48257H01L2224/48091H01L33/0095H01L33/007H01L2924/181H01L2924/00014H01L2924/00012
Inventor 篠原裕直村木典孝大泽弘
Owner TOYODA GOSEI CO LTD
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