Vacuum decomposing apparatus for separating gallium arsenide as metal gallium and metal arsenic

A technology of metal gallium and gallium arsenide, which is applied in the field of vacuum decomposition devices, can solve the problems of increasing the difficulty of the operator's work, the low decomposition rate of gallium arsenide, and the lack of collection of arsenic, so as to facilitate subsequent utilization, improve the decomposition rate, The effect of eliminating environmental pollution
CN101413065AInactive Publication Date: 2009-04-22NANJING JINMEI GALLIUM
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
NANJING JINMEI GALLIUM
Publication Date
2009-04-22
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention discloses a vacuum decomposition device for separating gallium arsenide into metallic gallium and metallic arsenic. The decomposition device comprises a vacuum furnace body provided with a cooling device, wherein the inside of the vacuum furnace body is divided into a heating zone, a buffer zone and a cooling zone from bottom to top; the buffer zone is provided with an arsenic steam duct arranged on the upper part of the heating zone; the cooling zone is provided with an arsenic collection blind pipe linked with the arsenic steam duct; and the arsenic collection blind pipe is provided with a cooling device. The decomposition device has the advantages that the decomposition device can endure higher temperature than the prior quartz decomposition system; at a high temperature between 1,200 and 1,500 DEG C, the gallium arsenide decomposition rate of the device is almost 100 percent; and arsenic is efficiently collected, which eliminates pollution on environment and is beneficial to the subsequent utilization of the arsenic.
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Description

technical field

[0001] The invention relates to a vacuum separation device, in particular to a vacuum decomposition device for separating gallium arsenide into metal gallium and metal arsenic. Background technique

[0002] Since sixty years, with the emergence of gallium arsenide compound semiconductors, gallium arsenide tailings have been left in the synthesis of gallium arsenide compound semiconductors, the preparation of single crystals, the production of wafers, and the preparation of devices. Therefore, people began to study the process of recovering gallium from gallium arsenide. There are mainly two recovery process ideas, which are briefly described as follows:

[0003] Separation of gallium arsenide in quartz systems. Because gallium arsenide is synthesized in a quartz system, under vacuum conditions, at about 1230°C, arsenic vapor and metal gallium are synthesized into gallium arsenide. Therefore, the relevant units in our country have carried out the research wo...

Claims

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