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Vacuum decomposing apparatus for separating gallium arsenide as metal gallium and metal arsenic

A technology of metal gallium and gallium arsenide, which is applied in the field of vacuum decomposition devices, can solve the problems of increasing the difficulty of the operator's work, the low decomposition rate of gallium arsenide, and the lack of collection of arsenic, so as to facilitate subsequent utilization, improve the decomposition rate, The effect of eliminating environmental pollution

Inactive Publication Date: 2009-04-22
NANJING JINMEI GALLIUM
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Problems solved by technology

The disadvantage of this method is that the decomposition rate of gallium arsenide is low, only about 60%; and the arsenic is not collected, causing environmental pollution
The disadvantage of this process is that, because gallium arsenide is relatively stable, it is more difficult to oxidize. In addition, the arsenic oxide produced after oxidation is a highly toxic substance, which is easy to cause environmental pollution during the operation process, and also increases the difficulty of the operator's work.

Method used

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  • Vacuum decomposing apparatus for separating gallium arsenide as metal gallium and metal arsenic

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Embodiment 1

[0015] Embodiment 1: as figure 1 As shown, a vacuum decomposition device for separating gallium arsenide into metal gallium and metal arsenic includes a vacuum furnace body 9 provided with a cooling device, and the inside of the vacuum furnace body 9 is divided into a heating zone 3, a buffer Zone 5, cooling zone 7, the buffer zone 5 is provided with an arsenic vapor conduit 4 placed on the top of the heating zone 3 for providing an ascending passage for the arsenic vapor; Connected arsenic collection blind pipe 6, a buffer baffle 8 with holes is provided in the arsenic vapor conduit 4 to slow down the rising speed of arsenic vapor evaporation and increase the number of buffer baffles 8 as needed; the heating Zone 3 is composed of a crucible 10, a heater 1, and an insulating layer 11. The crucible 10 is made of graphite and is used to place gallium arsenide 2 to be separated. The heater 1 is a three-phase alternating current heater, and the partially decomposed gallium metal i...

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Abstract

The invention discloses a vacuum decomposition device for separating gallium arsenide into metallic gallium and metallic arsenic. The decomposition device comprises a vacuum furnace body provided with a cooling device, wherein the inside of the vacuum furnace body is divided into a heating zone, a buffer zone and a cooling zone from bottom to top; the buffer zone is provided with an arsenic steam duct arranged on the upper part of the heating zone; the cooling zone is provided with an arsenic collection blind pipe linked with the arsenic steam duct; and the arsenic collection blind pipe is provided with a cooling device. The decomposition device has the advantages that the decomposition device can endure higher temperature than the prior quartz decomposition system; at a high temperature between 1,200 and 1,500 DEG C, the gallium arsenide decomposition rate of the device is almost 100 percent; and arsenic is efficiently collected, which eliminates pollution on environment and is beneficial to the subsequent utilization of the arsenic.

Description

technical field [0001] The invention relates to a vacuum separation device, in particular to a vacuum decomposition device for separating gallium arsenide into metal gallium and metal arsenic. Background technique [0002] Since sixty years, with the emergence of gallium arsenide compound semiconductors, gallium arsenide tailings have been left in the synthesis of gallium arsenide compound semiconductors, the preparation of single crystals, the production of wafers, and the preparation of devices. Therefore, people began to study the process of recovering gallium from gallium arsenide. There are mainly two recovery process ideas, which are briefly described as follows: [0003] Separation of gallium arsenide in quartz systems. Because gallium arsenide is synthesized in a quartz system, under vacuum conditions, at about 1230°C, arsenic vapor and metal gallium are synthesized into gallium arsenide. Therefore, the relevant units in our country have carried out the research wo...

Claims

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Application Information

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IPC IPC(8): C22B58/00C22B30/04C22B5/16
Inventor 范家骅陆森云
Owner NANJING JINMEI GALLIUM
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