OR gate logic circuit and its forming method

Abstract

The invention relates to an OR-logic circuit and a fabricating method thereof. The OR-logic circuit comprises a first input terminal, a second input terminal, a first enhancement type back-gate ZnO nanowire field effect transistor, and a second enhancement type back-gate ZnO nanowire field effect transistor. The first input terminal is used for receiving a first input voltage signal; the second input terminal is used for receiving a second input voltage signal; the gate electrode of the first enhancement type back-gate ZnO nanowire field effect transistor is connected to the first input terminal; the gate electrode of the second enhancement type back-gate ZnO nanowire field effect transistor is connected to the second input terminal; the drain electrode of the first enhancement type back-gate ZnO nanowire field effect transistor and the drain electrode of the second enhancement type back-gate ZnO nanowire field effect transistor are coupled to a voltage source; the source electrodes of the two enhancement type back-gate ZnO nanowire field effect transistors are coupled to a point; and the point is coupled to an earth point by a resistor and serves as an output terminal used for outputting the voltage signals. The invention fabricates the OR-logic circuit based on the direct coupling field effect of the ZnO nanowire field effect transistor.

Description

Technical field [0001] The present invention relates to the field of compound semiconductor materials and devices, in particular to a direct-coupled FET Logic (DCFL) OR gate logic circuit based on a back-gate zinc oxide nanowire field effect transistor and a method for forming the same . Background technique [0002] ZnO is a new type of multifunctional compound semiconductor material with direct band gap of II-VI group, which is called the third generation wide band gap semiconductor material. The ZnO crystal has a wurtzite structure, the band gap is about 3.37 eV, and the exciton binding energy is about 60 meV. ZnO has the characteristics of semiconductor, optoelectronics, piezoelectric, pyroelectric, gas sensitivity and transparent conductivity, and has broad potential application value in many fields such as sensing, sound, light, and electricity. [0003] In recent years, research on ZnO materials and devices has received extensive attention. The research scope covers the gr...

AI Technical Summary

Problems solved by technology

However, since intrinsic ZnO is an N-type semiconductor, and most of the fabricated ZnO NW FETs are depletion-type devices, the application of ZnO nanowire materials to realize logic circuits based on enhancement / depletion-type FETs is restricted.

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