Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Flash memory

A flash memory and floating gate technology, applied in the direction of electrical components, transistors, electric solid-state devices, etc., can solve problems such as inability to develop smaller sizes, lower component reliability, and limited components

Active Publication Date: 2009-05-27
NAN YA TECH
View PDF0 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the known manufacturing process of flash memory, if the gate length is scaled down to about 45 nanometers or less, the floating gate dielectric layer will be difficult to continue shrinking down accordingly, so that the device is limited by the above-mentioned dimensions and cannot Moving to smaller sizes
In addition, when the line width is reduced, it is also easy to produce short channel effect or hot carrier effect and reduce the reliability of components

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Flash memory
  • Flash memory
  • Flash memory

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0028] see Figure 1~2 , illustrating an embodiment of the present invention, a flash memory device. figure 1 It is a plane configuration diagram of a flash memory device. figure 2 for figure 1 A partial cross-sectional schematic view taken along section line A-A.

[0029] figure 1 100 represents an active region, 110 represents a gate layer, and marks 120 on both sides of the gate layer 110 represent two floating gates.

[0030] figure 2 Among them, the flash memory 10 includes a substrate 12 , a first insulating layer 14 , a control gate 16 , two floating gates 18 and a second insulating layer 20 . The first insulating layer 14 is formed on the substrate 12 . The control gate 16 is disposed on the first insulating layer 14 . The two floating gates 18 are respectively coplanar with the substrate 12 and disposed on two sides of the control gate 16 . The second insulating layer 20 is formed between the control gate 16 and the first insulating layer 14 and between the ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a flash memory, which comprises a substrate, a first insulation layer formed on the substrate, a control grid arranged on the first insulation layer and two floating grids which are arranged on the same plane as the substrate respectively, wherein the two floating grids are arranged on both sides of the control grid. Because the control grid can control the two floating grids at the same time, the input and output of two groups of data can be performed simultaneously, which really helps to improve the efficiency of element; moreover, the design principle is based on the increased number of floating grids rather than the size reduction of the grids, the defects such as short channel effect or hot current carrier effect due to the size reduction can be overcome.

Description

technical field [0001] The invention relates to a semiconductor storage device, in particular to a flash memory with double floating gates. Background technique [0002] In semiconductor storage devices, flash memory is a non-volatile memory, and belongs to erasable programmable read-only memory (EPROM). Generally, a flash memory has two gates (a floating gate and a control gate), wherein the floating gate is used to store charges, and the control gate is used to control data input and output. The position of the floating gate is below the control gate, and it is in a floating state because it is not connected to the external circuit. The control gate is usually connected to a word line. The advantage of flash memory is that it can erase the entire memory block, and the erasing speed is fast, only about 1 to 2 seconds. Therefore, in recent years, flash memory has been widely used in various electronic consumer products, such as digital cameras, digital video cameras, mobi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L29/788H01L29/423H01L27/115H01L27/11521
Inventor 张明成廖伟明王哲麒黄建章
Owner NAN YA TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com