Chalcogenide infrared glass and preparation process thereof

A technology for infrared glass and preparation process, applied in the field of chalcogenide infrared glass and its preparation process, can solve the problems of inability to completely remove pollution, complicated operation process, etc., and achieve the effects of reducing equipment requirements, short process flow and improving production efficiency

Inactive Publication Date: 2009-06-03
XIAN TECHNOLOGICAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The present invention provides a chalcogenide infrared glass and its preparation process to solve the problems in the pri

Method used

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  • Chalcogenide infrared glass and preparation process thereof
  • Chalcogenide infrared glass and preparation process thereof

Examples

Experimental program
Comparison scheme
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Example Embodiment

[0030] Example 1:

[0031] A chalcogenide infrared glass prepared by the following process, which in turn includes the following steps

[0032] 1. Material preparation:

[0033] The glass raw materials include Ge, Se, and Sb with a purity of 99.999%. They are prepared according to the following proportions. Ge is weighed at 28% atomic percentage, Se is weighed at 63% atomic percentage, and Sb is weighed at 9% atomic percentage. , Dry for standby;

[0034] The impurity removal elements include Al, Mg and rare earth, each added at 1%wt.

[0035] 2. Sealing:

[0036] Put the raw materials and the impurity-removing elements into two quartz crucibles, connect the two crucibles and vacuum and heat the quartz crucible until the vacuum degree reaches 1×10 -4 Torr, melt the end of the quartz crucible with a hydrogen-oxygen flame and gradually seal it.

[0037] 3. Sintering and impurity removal:

[0038] Place the sealed quartz crucible in a well-type three-stage electric furnace, start to ...

Example Embodiment

[0040] Example 2:

[0041] A chalcogenide infrared glass prepared by the following process, which in turn includes the following steps

[0042] 1. Material preparation:

[0043] The glass raw materials include Ge, Se and Sb with a purity of 99.999%. They are proportioned according to the following proportions. Ge is weighed at 18% atomic percentage, Se is weighed at 72% atomic percentage, and Sb is weighed at 10% atomic percentage. , Dry for standby;

[0044] The impurity removal elements include Al, Mg and rare earth, each added at 0.9%wt.

[0045] 2. Sealing:

[0046]Put the raw materials and the impurity-removing elements into two quartz crucibles, connect the two crucibles and vacuum and heat the quartz crucible until the vacuum degree reaches 1×10 -4 Torr, melt the end of the quartz crucible with a hydrogen-oxygen flame and gradually seal it.

[0047] 3. Sintering and impurity removal:

[0048] Place the sealed quartz crucible in a well-type three-stage electric furnace, star...

Example Embodiment

[0050] Example 3:

[0051] A chalcogenide infrared glass prepared by the following process, which in turn includes the following steps

[0052] 1. Material preparation:

[0053] The glass raw materials include Ge, Se and Sb with a purity of 99.999%. They are prepared according to the following proportions. Ge is weighed at 25% atomic percentage, Se is weighed at 64% atomic percentage, and Sb is weighed at 11% atomic percentage. , Dry for standby;

[0054] The impurity removal elements include Al, Mg and rare earths. Al and Mg are added at 1.2%wt and rare earth 0.9%wt.

[0055] 2. Sealing:

[0056] Put the raw materials and the impurity-removing elements into two quartz crucibles, connect the two crucibles and vacuum and heat the quartz crucible until the vacuum degree reaches 1×10 -4 Torr, melt the end of the quartz crucible with a hydrogen-oxygen flame and gradually seal it.

[0057] 3. Sintering and impurity removal:

[0058] Place the sealed quartz crucible in a well-type three...

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Abstract

The invention relates to the technical field of optical system device materials of infrared thermal imagers, particularly chalcogenide infrared glass and the preparation process thereof. The technical scheme to solve the problem of the prior art that the raw material pollution caused by air and water can not be eliminated and the operation process is complex is that chalcogenide infrared glass is prepared by a process which comprises the following steps in sequence: 1,feed preparing: drying raw material for reservation; 2, sealing: putting glass raw material and edulcorated elements in quartz crucibles respectively and connecting the two crucibles, vacuum-pumping and heating, and then sealing; and 3, edulcorating and sintering: placing the sealed quartz tubes in an electric furnace, starting to heat up the sealed quartz tubes slowly to ensure that Se and Sb can be melted, then heating continuously to ensure complete reaction, and cooling freely. Compared with the prior art, the chalcogenide infrared glass and the preparing process therefore have the advantages that: 1, the quality is effectively improved; 2, the process is simple; 3, the cost is low; and 4, the production efficiency is high.

Description

Technical field: [0001] The invention relates to the technical field of infrared thermal imager optical system device material and preparation process, in particular to a chalcogenide infrared glass and a preparation process thereof. Background technique: [0002] One of the important reasons that hinder the widespread commercial application of thermal imaging systems is their high price. At present, the materials used for the optical components of the thermal imaging system are generally single crystal germanium or single crystal zinc selenide. Due to the complex production process of these materials, their production costs are very high, in view of which people seek other alternative materials to reduce costs. Studies have found that chalcogenide glasses have good infrared transmission properties, and are much easier to prepare and process than growing single crystals, and are not limited by size. Therefore, this material has great development value and is regarded as a ...

Claims

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Application Information

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IPC IPC(8): C03C4/00C03C3/253C03C3/32
Inventor 坚增运常芳娥刘卫国介万奇
Owner XIAN TECHNOLOGICAL UNIV
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