Method for producing X ray exposure mask based on double-layer gum process
A technology of X-ray and double-layer photoresist, which can be used in the direction of originals for photomechanical processing, photo-plate-making process of pattern surface, and photo-plate-making process coating equipment, etc., which can solve the resolution restriction and high film retention rate , unable to meet the practical requirements and other problems, to achieve the effect of reducing the high film retention rate and improving the precision
Inactive Publication Date: 2009-06-10
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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Problems solved by technology
However, when negative electron beam photoresists are used, the resolution is restricted due to the effect of backscattered electrons, and the film retention rate is high, which has a great impact on the electroplating process of X-ray exposure masks.
If positive electron beam glue is used, the area required for electron beam lithography will increase by orders of magnitude, which cannot meet the practical requirements
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[0035] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.
[0036] In the method for making an X-ray exposure mask provided by the present invention, the X-ray exposure mask is produced by electroplating the upper layer glue in the electron beam lithography double-layer glue, and the bottom layer glue in the reactive ion etching double-layer glue. The X-ray blocking layer is then removed from the glue, and the plated substrate is removed to form an X-ray exposure mask.
[0037] Such as figure 1 as shown, figure 1 It is a flow chart of a method for manufacturing an X-ray exposure mask provided by the present invention, and the method includes the following steps:
[0038] Step 101: coating a self-supporting film on the front side of the silicon substrate;
[0039] Step 102: Unde...
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Abstract
The invention discloses a method for preparing an X ray exposure mask. The method comprises: coating a self-supporting thin film on the front surface of a silicon substrate; under protection of a clamping apparatus, carrying out isotropic etching on the back surface of the silicon substrate to form a hollowed self-supporting thin film; coating a metal thin film by vaporization on the front surface of the self-supporting thin film as an electroplating substrate; coating double layer electron beam resist on the metal thin film; carrying out electron beam lithography, development and reactive ion etching of the coated double layer electron beam resist to form a double layer resist pattern; electroplating metal on the double layer resist pattern to form a barrier layer of the X ray exposure mask; stripping off the double layer electron beam resist; and removing an electroplating substrate. The method can effectively avoid exposure of upper layer resist caused by back scattered electrons produced by the substrate and the metal thin film, thereby improving the accuracy of the electron beam lithography, and alleviating the problem of high mask retention rate of negative electron beam resist.
Description
technical field [0001] The invention relates to the technical field of microfabrication in semiconductor science, in particular to a method for manufacturing an X-ray exposure mask by electron beam lithography based on a double-layer adhesive process. Background technique [0002] Electron beam lithography is a common method for fabricating X-ray masks, featuring high resolution and small feature sizes. However, when negative electron beam photoresists are used, the resolution is restricted due to the effect of backscattered electrons, and the film retention rate is high, which has a great influence on the electroplating process of the X-ray exposure mask. If positive electron beam glue is used, the area required for electron beam lithography will increase by an order of magnitude, which cannot meet the practical requirements. Contents of the invention [0003] (1) Technical problems to be solved [0004] In view of this, the main purpose of the present invention is to p...
Claims
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Login to View More IPC IPC(8): G03F1/00G03F7/00G03F7/42G03F7/16H01L21/027G03F1/22
Inventor 刘兴华涂德钰朱效立谢常青刘明
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI