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Frequency multiplier for wave-guide structure and manufacturing method thereof

A waveguide structure and frequency multiplier technology, applied in the laser field, can solve the problems of low frequency doubling efficiency and limited effective frequency doubling length, and achieve the effect of improving efficiency

Inactive Publication Date: 2009-06-17
SHANGHAI BRANCH FUZHOU GAOYI COMM CO LTD
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  • Application Information

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Problems solved by technology

Due to the limited Rayleigh length, the effective frequency multiplication length is limited, and the overall frequency multiplication efficiency is still very low

Method used

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  • Frequency multiplier for wave-guide structure and manufacturing method thereof
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  • Frequency multiplier for wave-guide structure and manufacturing method thereof

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Embodiment Construction

[0048] The present invention will be further described in conjunction with the accompanying drawings and specific embodiments.

[0049] Referring to Fig. 1(a) and Fig. 1(b), it is a cross-sectional schematic view and a longitudinal sectional view of the frequency multiplier of the present invention. Among them, 101 is the frequency doubling crystal (shown in gray), 102A, 102B, 102C, 102D are glue layers or deepened optical glue layers with a lower refractive index than the frequency doubling crystal 101 (shown in the diagonal line area), 103A, 103B, 103C and 103D are optical materials as substrates.

[0050] Referring to Fig. 1(c) and Fig. 1(d), it is a schematic cross-sectional view and a longitudinal sectional view of the array frequency multiplier of the present invention. It is similar in structure to Fig. 1(a) and Fig. 1(b), and it is a frequency doubling crystal waveguide array. Among them, 101 is a frequency doubling crystal, 1011, 1012, ... 101n are a series of frequ...

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Abstract

The invention relates to the laser field, in particular to a waveguide structured frequency doubler and a manufacturing method thereof. The invention utilizes multiple optical processing, cutting, polishing to manufacture a frequency doubling crystal wafer (or a crystal wafer bonded with a substrate), employs gluing, deepened optical cementing processes to bond the frequency doubling crystal wafer ( or the crystal wafer bonded with the substrate )to the substrate, and then process and polishes the frequency doubling wafer ( or the crystal wafer boned with the substrate ) on the substrate into required dimension of the waveguide structure. The lateral side of the frequency doubling crystal wafer is coated by a low refractive index deepened optical cement layer or glue layer, thereby forming the waveguide structured frequency doubler, wherein the utilized crystal can generate frequency doubling or multiple harmonic wave via critical phase matching, or can generate frequency doubling or higher harmonic wave via non-critical phase matching. The invention overcomes defects of the conventional doublers, and enables optical power density to be much larger than power density of light beams, thereby easily realizing non-linear effect of waveguide materials and further greatly increasing efficiency of the non-linear effect thereof.

Description

technical field [0001] The invention relates to the field of lasers, in particular to a frequency doubler with a waveguide structure and a manufacturing method thereof. Background technique [0002] In the field of laser frequency doubling, the quasi-phase matching method has been used to obtain the frequency doubled light under the focused state of low power density fundamental wave light. Generally, LiNbO3 crystals are mostly used, which has a low damage threshold and complex manufacturing process; magnesium-doped LiNbO3 is also used to increase the damage threshold, but it is not easy to obtain large-sized crystals, so it is difficult to obtain mass production levels; The waveguide structure obtained in the frequency-doubling crystal by hetero-etching is also limited to the laboratory level and has not been widely used. [0003] In addition, many low-power CW lasers hope to obtain extra-cavity frequency doubling, such as watt-level semiconductor lasers. If higher gain ca...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S3/109
Inventor 吴砺凌吉武邱英陈卫民
Owner SHANGHAI BRANCH FUZHOU GAOYI COMM CO LTD
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