High purity aluminum ultrasonic purification method

A purification method and ultrasonic technology, applied in the field of metallurgy, can solve the problems of limiting purification efficiency and coarse grains, and achieve the effect of reducing the thickness of the boundary layer, uniform distribution, and improving the removal efficiency.

Active Publication Date: 2009-06-24
SHANGHAI JIAO TONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method has a good purification effect, but controlling the crystal growth morphology to improve the purification efficiency can easily lead to coarse grains, and the purification efficiency is also affected by the interface viscous layer, which limits the further improvement of the purification efficiency

Method used

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  • High purity aluminum ultrasonic purification method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] In the first step, put 10 kilograms of 4N refined aluminum ingots into the heating furnace cavity, and after passing in an inert protective gas for 5 minutes, start heating, and keep the flow rate of the ventilation at 0.2 L / min. Raise the furnace temperature to 670°C to melt the aluminum in the melting crucible.

[0020] In the second step, after the aluminum ingot is completely melted, extend the seed crystal connected to the ultrasonic generator located above the crucible to 3 cm below the liquid surface of the aluminum melt, turn on the ultrasonic generator, apply ultrasonic action, and the ultrasonic power is 10 kW. The other end adopts water-cooled forced cooling to ensure a temperature gradient of 300K / cm at the front of the interface.

[0021] In the third step, the temperature of the melt is controlled near the melting point. After the crystallization starts, the seed crystal is slowly lifted upwards (or the crucible containing the aluminum melt is slowly drawn...

Embodiment 2

[0024] In the first step, put 10 kg of 4N refined aluminum ingot into the heating furnace chamber, and after passing in an inert protective gas for 5 minutes, start heating, and keep the flow rate of the ventilation at 0.2 L / min. Raise the furnace temperature to 670°C to melt the aluminum in the melting crucible.

[0025] In the second step, after the aluminum ingot is completely melted, extend the seed crystal connected to the ultrasonic generator located above the crucible to 2.5cm below the liquid surface of the aluminum melt, turn on the ultrasonic generator, apply ultrasonic action, the ultrasonic power is 5kW, and the seed crystal The other end adopts water-cooled forced cooling to ensure a temperature gradient of 200K / cm at the front of the interface.

[0026] In the third step, the temperature of the melt is controlled near the melting point. After the crystallization starts, the seed crystal is slowly lifted upwards (or the crucible containing the aluminum melt is slo...

Embodiment 3

[0029] In the first step, put 10 kg of 4N refined aluminum ingot into the heating furnace chamber, and after passing in an inert protective gas for 5 minutes, start heating, and keep the flow rate of the ventilation at 0.2 L / min. Raise the furnace temperature to 670°C to melt the aluminum in the melting crucible.

[0030] In the second step, after the aluminum ingot is completely melted, extend the seed crystal connected to the ultrasonic generator located above the crucible to 2cm below the liquid surface of the aluminum melt, turn on the ultrasonic generator, apply ultrasonic action, and the ultrasonic power is 0.2kW. The other end adopts water-cooled forced cooling to ensure a temperature gradient of 100K / cm at the front of the interface.

[0031] In the third step, the temperature of the melt is controlled near the melting point. After the crystallization starts, the seed crystal is slowly lifted upwards (or the crucible containing the aluminum melt is slowly drawn down). ...

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Abstract

The invention relates to a method for ultrasonically purifying high-purity aluminum in the technical field of casting and metallurgy. The method in particular comprises the following steps: melting aluminum in a crucible after a noble protective gas is led into a heating furnace chamber; after the temperature of aluminum liquid is raised to 660-750 DEG C, inoculating crystal is extended below the liquid surface of aluminum fused mass, an ultrasound generating device is started, the other end of the inoculating crystal undergoes forcible cooling of the water-cooling type, and 100-300 K/cm of temperature gradient is ensured to be generated at the front edge of an interface; the temperature of the fused mass is controlled to be around a melting point, after the start of crystallization, the inoculating crystal is slowly lifted upwards or the crucible containing the aluminum fused mass is slowly and downwardly drawn, crystallization speed is controlled to be at 5-25 cm/h, and the lifting, and drawing speed keeps consistent with the crystallization speed; and ultrasonic power is controlled to be between 0.2 kW and 10 kW, a finally formed aluminum ingot is cylindrical, solidoid purity is over 5 N, impurity elements are uniformly distributed in pure crystal, crystal grains are uniform and small, and average crystal grain size is less than 100 microns.

Description

technical field [0001] The invention relates to a method in the technical field of metallurgy, in particular to a method for ultrasonically purifying high-purity aluminum. Background technique [0002] Using ultrasound to interfere with the solidification process of metals, especially the directional solidification process of aluminum, obtains a uniform and fine grain structure while purifying the melt, and controls the distribution of impurity elements in the purified crystal, which is a mature industrialization process method. [0003] After searching the literature of the prior art, it is found that the Japanese patent number is: JP, 56-133434, and the name is: Manufacture of high purity aluminum. , an aluminum purification method that controls the microstructure of the purified crystal and the distribution of impurity elements. This method uses liquid aluminum as the raw material, and the crystallization is mainly in the form of cylindrical crystal flat interface growt...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C22B21/06
Inventor 东青张佼孙宝德王俊
Owner SHANGHAI JIAO TONG UNIV
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