ZnSe infrared anti-reflection film and method for producing the same

A technology of infrared anti-reflection coating and anti-reflection coating, which is applied in the direction of ion implantation plating, coating, instrument, etc., to achieve ideal anti-reflection effect, small mutual restraint and strong controllability

Inactive Publication Date: 2009-06-24
SICHUAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The infrared anti-reflection coating prepared by the patent number 200510016737.3 (the application patent publication number is CN1687807A) is only used in the range of 8-11.5 μm

Method used

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  • ZnSe infrared anti-reflection film and method for producing the same
  • ZnSe infrared anti-reflection film and method for producing the same
  • ZnSe infrared anti-reflection film and method for producing the same

Examples

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Comparison scheme
Effect test

Embodiment 1

[0017] Embodiment 1 The structure of double-layer anti-reflection film system

[0018] Lambda of the present invention 0 / 4~λ 0 / 4 The structure of the double-layer antireflection protective film system is as follows: figure 1 shown.

[0019] The refractive index of ZnSe is n 1 =2.4~2.58, the Ge that can be obtained in our experiment x C 1-x The refractive index of the film can be changed in a large range (2.0-4), so that, according to the design requirements, the Ge film with the required refractive index can be prepared x C 1-x film. First deposit a layer of high refractive index film on the ZnSe substrate (1), and its optical thickness is λ 0 / 4, the refractive index is n 2 , then the refractive index of the combined system of film and substrate is Y=n 2 2 / n 1 to be equivalent, when n 2 >n 1 when Y>n 1 . Then deposit a layer of optical thickness λ 0 / 4 low refractive index n 3 film, make n 3 is approximately equal to , a good anti-reflection effect can...

Embodiment 2

[0020] Embodiment 2 The preparation method of the ZnSe infrared anti-reflection film of the present invention

[0021] ZnSe infrared anti-reflection film prepared by intermediate frequency and DC magnetron sputtering deposition method with double targets, with CH 4 As the discharge gas, the mixed gas of Ar and Ar is respectively controlled by the needle valve and passed into the vacuum chamber in a certain proportion. The pressure of the vacuum chamber is 0.5-2Pa. After glow discharge, CH 4 The positive ions generated by the ionization of Ar and bombard the target source under the action of the electric field, and the sputtered Ge and C atoms or ions and CH 4 The hydrocarbon plasma generated by the decomposition undergoes a chemical reaction, and finally Ge is generated on the ZnSe substrate. x C 1-x film. In order to ensure the bonding force between the deposited film and the substrate, the ZnSe substrate needs to be pre-treated before the experiment, such as polishing an...

Embodiment 3

[0023] Example 3 Preparation method example

[0024] Taking the central wavelength of 10 μm as an example, a double-layer infrared anti-reflection coating system deposited on both sides.

[0025] Technological process is with embodiment 2. Using ZnSe as the substrate, depositing Ge x C 1-x Thin films of materials, intermediate frequency sputtering Ge targets, DC sputtering C targets, key process conditions for preparing double-layer films:

[0026] When depositing the first layer of high refractive index film (2) on the ZnSe substrate: CH 4 / (Ar+CH 4 ) with a voltage division ratio of 1:5; the intermediate frequency frequency is 40kHz, the voltage is 400V, and the current is 250mA; the pulse bias voltage is -80V, and the duty ratio is 80%; the deposition time is 20 minutes.

[0027] When depositing the second layer of low refractive index film (3) on the ZnSe substrate: CH 4 / (Ar+CH 4 ) with a voltage division ratio of 1:4; the intermediate frequency of the sputtering G...

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Abstract

The invention relates to an infrared anti-reflecting film and a preparation method thereof, and belongs to the technical field of films. Lambada 0 / 4 to Lambada 0 / 4 double-layer anti-reflecting films with high refractive index (2) and low refractive index (3) are prepared on a ZnSe basal body (1) in sequence through taking 3 to 12 Mu m as central wave length Lambada 0. The refractive index of the high refractive index film (2) is 3.0 to 4.0, and the optical thickness thereof is 1 to 3 Mu m; the refractive index of the low refractive index film (3) is 2.1 to 2.6, and the optical thickness thereof is 0.75 to 3 Mu m. The preparation method comprises the step of depositing the GexC1-x anti-reflecting films on single side or double sides of the ZnSe basal body by adopting the intermediate frequency and the direct current double-target magnetic control sputtering method and taking Ge and C as target sources, and CH4 and Ar mixed gas as auxiliary discharge gas. Two layers of GexC1 minus x films with different refractive indexes are prepared through controlling the sputtering current proportion of Ge and C targets and controlling the partial pressure ratio of CH4 / Ar; and the thickness of each film achieves Lambada 0 / 4 through controlling the time and other parameters. The method has the advantages of less parameter diversionary, simple control, and good anti-reflecting effect.

Description

1. Technical field [0001] The invention belongs to the technical field of thin films, and is a composition of an infrared window anti-reflection film and a preparation method of the anti-reflection film with a ZnSe material as a matrix. 2. Background technology [0002] The infrared window is an indispensable part of the infrared system, and its function is to protect the thermal imaging system from working normally in various harsh environments. In the 2-14μm band region, ZnSe is currently the preferred mid-infrared window material, but limited by its inherent properties, it is necessary to coat its surface with an anti-reflective protective film to improve its infrared light transmission performance and wear resistance. . [0003] The background technology of infrared anti-reflection film mainly contains the following: 1) Patent No. 93112643.6 (application patent publication number is CN1094455A) and 200310109045.4 (application patent publication number is CN1563479A) pat...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02B1/11C23C14/35C23C14/02C23C14/06C23C14/54G02B1/115
Inventor 黄宁康展长勇汪德志
Owner SICHUAN UNIV
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