Tungsten titanium alloy nanocrystalline gate-floating structure and preparation method thereof
A tungsten-titanium alloy and nanocrystalline technology, which is applied in the field of microelectronics to achieve good data retention characteristics, large physical thickness, and improve data retention characteristics and writing performance.
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[0039] In order to make the object, technical solution and advantages of the present invention clearer, the implementation manner of the present invention will be further described in detail below in conjunction with the accompanying drawings.
[0040] Such as figure 1 as shown, figure 1 Schematic diagram of the structure of the tungsten-titanium alloy nanocrystalline floating gate structure provided by the present invention.
[0041] The lowermost end of the structure is a silicon substrate 1, and the silicon substrate 1 is used to support the entire floating gate structure.
[0042] The silicon oxide layer 2 covered on the silicon substrate 1 has a thickness of 2nm to 4nm.
[0043] Cover the high dielectric constant film 3 on the silicon oxide layer 2, the composition of the high dielectric constant film can be HfO 2 Or HfAlO with a thickness of 4nm to 6nm.
[0044] The high dielectric constant film 3 is covered with a tungsten-titanium alloy nanocrystal charge storage l...
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