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Cerium oxide abrasive and slurry containing the same

A cerium dioxide and silicon dioxide technology, applied in chemical instruments and methods, other chemical processes, etc., can solve problems such as cost efficiency decline, and achieve the effect of solving tiny scratches, reducing polishing rate, and improving polishing selectivity

Inactive Publication Date: 2009-07-29
LG CHEM LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this makes the process less cost-effective

Method used

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  • Cerium oxide abrasive and slurry containing the same
  • Cerium oxide abrasive and slurry containing the same
  • Cerium oxide abrasive and slurry containing the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0077]

[0078] First, 1kg of cerium carbonate powder with a hexagonal crystal structure (see figure 2 XRD data in ) was charged into an alumina crucible, calcined at 350° C. for 12 hours under an oxidizing atmosphere into which air was sufficiently supplied, and crushed by using a jet mill. The ground powder was further calcined at 750° C. for 2 hours to obtain light yellow ceria powder.

[0079] After analysis by XRD, such as image 3 As shown in , it can be seen that a complete phase transition from cerium carbonate to ceria is completed.

[0080] Figure 5 is a photograph of ceria powder taken with SEM.

[0081]

[0082] A ceria dispersion was prepared by using 0.5 kg of ceria powder prepared as described above, 25 g of a dispersant (polyacrylic acid available from Aldrich), and 5 L of pure water. The ceria dispersion was titrated with ammonia water to pH 7.5, and the dispersion stabilization and particle size improvement steps were performed using a ball mill. H...

Embodiment 2

[0087] A cerium oxide powder and a CMP slurry containing the same ingredients were provided in the same manner as described in Example 1 except that the second calcination step was performed at 850° C. for 2 hours. The ceria powder dispersed in the CMP slurry has an average particle diameter of 176 nm and a particle size distribution of 70-300 nm.

Embodiment 3

[0089] Ceria powder and CMP slurry containing the same ingredients were provided in the same manner as described in Example 1 except that the second calcination step was performed at 950° C. for 2 hours. The ceria powder dispersed in the CMP slurry has an average particle diameter of 182 nm and a particle size distribution of 70-300 nm.

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Abstract

Disclosed is cerium oxide powder for a CMP abrasive, which can improve polishing selectivity of a silicon oxide layer to a silicon nitride layer and / or within-wafer non- uniformity (WIWNU) during chemical mechanical polishing in a semiconductor fabricating process. More particularly, the cerium oxide powder is obtained by using cerium carbonate having a hexagonal crystal structure as a precursor. Also, CMP slurry comprising the cerium oxide powder as an abrasive, and a shallow trench isolation method for a semiconductor device using the CMP slurry as polishing slurry are disclosed.

Description

technical field [0001] The present invention relates to ceria powders for use in CMP abrasives that can improve polishing selectivity of silicon dioxide layers versus silicon nitride layers and / or intra-wafer non-uniformity (WIWNU) during chemical mechanical polishing in semiconductor manufacturing processes . The invention also relates to a CMP slurry comprising the ceria powder. Background technique [0002] In general, in current semiconductor manufacturing processes, wafer diameter tends to be increased to realize high integration of ULSI (Ultra Large Scale Integration). Likewise, current semiconductor fabrication is subject to more stringent standards including minimum line width requirements of 0.13 μm or less. Furthermore, in order to improve the quality of semiconductor devices, a step of forming a multiple interconnection or a multilayer interconnection structure on a wafer is essentially required. However, the non-planarization that occurs after implementing one...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K3/14
Inventor 吴明焕曹昇范鲁埈硕金种珌金长烈
Owner LG CHEM LTD