Process for producing codoped In2O3 based pyroelectric material

A thermoelectric material, double-doping technology, applied in the field of material science, can solve the problems of high reaction temperature, long reaction time, large energy consumption, etc., and achieve the effect of overcoming high reaction temperature, improved sample performance, and low sintering temperature

Inactive Publication Date: 2009-08-19
TSINGHUA UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] To sum up, the solid-phase reaction synthesis method has high reaction temperature, long reaction time, high energy consumption, and severe In volatilization at high temperature, causing the compound to deviate from the chemical ratio.

Method used

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  • Process for producing codoped In2O3 based pyroelectric material
  • Process for producing codoped In2O3 based pyroelectric material
  • Process for producing codoped In2O3 based pyroelectric material

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preparation example Construction

[0025] A kind of preparation method of double-doped In2O3 based thermoelectric material provided by the present invention, its process steps are as follows:

[0026] 1) First press In 2-2x Zn x Ge x o 3 The stoichiometric ratio, weighed ZnO, GeO 2 and In 2 o 3 powder, where 0

[0027] 2) ZnO, GeO 2 and In 2 o 3 After the powders are mixed, they are calcined at 250° C. to 700° C. to complete the phase formation stage; the calcining time is preferably 1 to 6 hours.

[0028] 3) Put the calcined powder into a graphite mold, compact it, and sinter it into a bulk material with discharge plasma. ~10 minutes. That is, Zn, Ge double-doped In 2 o 3 Oxide thermoelectric materials.

Embodiment 1

[0031] Follow In 1.98 Zn 0.01 Ge 0.01 o 3 The ratio, weigh ZnO, GeO 2 and In 2 o 3 , After mixing, through the pre-sintering process, sintering in the air at 250 ° C for 1 hour to complete the phase formation stage of the material phase. Then mix, granulate, and sinter in SPS discharge plasma sintering furnace under the condition of 850°C, the heating rate is 100°C / min, and keep warm for 2 minutes to obtain In 1.98 Zn 0.01 Ge 0.01 o 3 ceramics. its characteristics see figure 1 , 2 shows. Its ZT value can reach 0.4 at 700°C.

Embodiment 2

[0033] Follow In 1.90 Zn 0.05 Ge 0.05 o 3 The ratio, weigh ZnO, GeO 2 and In 2 o 3 , After mixing, through the pre-sintering process, sintering in air at 400 ° C for 3 hours to complete the phase formation stage of the material phase. Then mix, granulate, and sinter in SPS discharge plasma sintering furnace under the condition of 900°C, the heating rate is 130°C / min, and keep it for 4 minutes to obtain In 1.94 Zn 0.03 Ge 0.03 o 3 ceramics. its characteristics see image 3 , 4 shows. Its ZT value can reach 0.6 at 700°C.

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Abstract

A method for preparing double-doped In2O3 based thermoelectric materials relates to oxide ceramics and the preparation thereof. The method comprises the following steps: powders of ZnO, GeO2 and In2O3 are weighed and taken according to the stoichiometric ratio of In(2-2x)ZnxGexO3 (x is more than 0 but less than or equal to 0.20), and then the powders are mixed and calcined at the temperature of 250-700 DEG C, the phase-forming stage is completed; the calcined powder is put into a graphite mould and compacted, and then is sintered into a bulk material by the discharge plasma at the temperature of 850-1000 DEG C, thus obtaining the double-doped In2O3 oxide thermoelectric materials of Zn and Ge. Compared with the common solid phase sintering, the invention has short reaction time and low sintering temperature and can effectively overcome the disadvantages that the reaction temperature in the prior art is high, the reaction time is long, the energy consumption is high and the compound deviates from the stoichiometric ratio, etc. Besides, the property of the sintered samples is greatly enhanced and the ZT value thereof can achieve 0.6 at the temperature of 700 DEG C.

Description

technical field [0001] The invention belongs to the field of material science, in particular to an oxide ceramic material and a preparation method thereof, and mainly relates to a double-doped In 2 o 3 Preparation method of oxide thermoelectric material. Background technique [0002] A thermoelectric material is a material that can convert heat to electricity in a solid state with few moving parts. In recent years, due to the need of environmental protection, the research of new thermoelectric materials has attracted more and more attention. Thermoelectric materials can be used as carriers for reversible conversion of heat energy and electric energy. Thermoelectric devices with thermoelectric materials as the core module have the advantages of light structure, small size, long service life, no pollution to the environment, and can be used under very harsh environmental conditions. The use and other advantages, and the reversibility of the thermoelectric effect also determ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/01C04B35/622H01L35/34H01L35/22
Inventor 林元华兰金叻方辉南策文
Owner TSINGHUA UNIV
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