Cultivation growing process for optical quartz crystal

Abstract

The invention provides a cultivation growing process for optical quartz crystal, which comprises the following steps: step1. optical quartz crystal is incised, the incision direction and the optical axis of the optical quartz crystal are at a 45-degree angle, and meanwhile the incision surface is parallel to the optical axis of the optical quartz crystal, slices are taken out, and 45-degree trimming cultivation crystal seeds are obtained; step2, the 45-degree trimming cultivation crystal seeds are placed into a high pressure autoclave and single sides of the 45-degree trimming cultivation crystal seeds are cultivated to cause the 45-degree trimming cultivation crystal seeds to grow, thus obtaining 45-degree trimming crystals, namely, the optical quartz crystal for processing jumbo size optical piezoid. The process can cultivate and grow the optical quartz crystal which can process the jumbo size optical piezoid by changing the trimming of the seed crystal and has the advantages of simple process and easy cultivation.

Description

technical field [0001] The invention relates to a large-size optical quartz wafer used for an optical low-pass filter, in particular to a cultivation and growth process of an optical quartz crystal, which is used for processing the large-size optical quartz wafer. Background technique [0002] With the advent of the optical information age, digital products such as digital cameras, digital video cameras, high-definition digital cameras and other products have sprung up, and are rapidly reaching the general public; the core component of digital imaging equipment, CCD, that is, the size of the photosensitive device is constantly increasing. Increase to produce higher image resolution. At present, professional digital camera CCDs usually use 2 / 3-inch CCDs to obtain greater resolution; in order to obtain better images, OLPF will be installed in front of the CCD photosensitive components. That is, the low-pass filter, because the CCD photosensitive component reads images using th...

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Problems solved by technology

[0003] At present, the industrial production of artificial quartz crystals is all grown by hydrothermal method, that is, natural quartz raw materials and solvents are sealed in an autoclave, and heated to a temperature of 330-380 °C and a pressure of 80-150 MPa. , the raw materials are dissolved and crystallized to obtain artificial quartz crystals; the domestic production equipment is mainly small autoclaves with an inner diameter of 250-300mm, the unit yield is about 120-180kg, and the inner diameter of the autoclave does not exceed 400mm at most; Japan and Russia are Large-scale autoclaves with an inner diameter of 600-800mm are the main ones, and the unit yield can reach 1800-2000kg; large-scale autoclaves generally adopt a growth process with a lower pressure, and the pressure is about 80MPa, so the requirements for the heating control system and power quality are very strict. The reliability and power quality of the heating control system in my country are not up to the requirements, which limits the application of low-pressure technology. Only high-pressure technology is used for production, that is, the pressure is about 1400 standard atmospheric pressure; at present, the manufacturing level of large-caliber autoclaves determines Therefore, the growth of large-scale optical crystals in my country cannot be realized smoothly due to the limitation of production equipment;

[0004] In the prior art, according to optical principles, quartz wafers for OLPF are usually obtained by cutting at 45 degrees twice, such as figure 1 As shown, the conventional process: the required wafer is cut from the crystal 1 grown from the 0-degree seed crystal 2 in the figure, wherein the thickness direction of the 0-degree seed crystal 2 is parallel to the Z direction of the crystal 1. First, the first The second cut is to cut the slice after the cutter is rotated 45 degrees around the X axis to obtain a 45-degree cut crystal square piece 3, and then, as figure 2 As shown, the second cut and slice is cut for the 45-degree cut crystal square piece 3 rotated 45 degrees, and at this time, the required wafer 4 is obtained; since the Z-direction dimension thickness of the crystal 1 is generally less than 30 mm, it is subject to Due to this limitation, it is impossible to cut out large-size OLPF wafers that can meet the needs from the crystals grown in the prior art

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